MTP6 Search Results

Contextual Info: 23/06/2014 www.crouzet.com Programmable touch panels MTP6/50 & MTP8/50 PA Part number 88970502 MTP6/50 & MTP8/50 4.3''TFT-LCD compact resistive touch panels, 65536 colors, LED backlight Graphical resolution : 480 x 272 pixels Wide viewing angle : 70° horizontally and vertically

AN569

Abstract: MTP6P20E
Contextual Info: MTP6P20E Preferred Device Power MOSFET 6 Amps, 200 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

Contextual Info: PACKAGE DIMENSIONS MTP6-1 0~10° 2.9±0.2 4 1 2 3 0.6 0.445±0.1 5 +0.2 1.6 - 0.1 6 2.8±0.2 1.9±0.2 0.95 0.4±0.1 0.1 1.1±0.1 0.1MAX 0.8 +0.1 0.13 -0.03 UNIT : mm

Contextual Info: 23/06/2014 www.crouzet.com Programmable touch panels MTP6/50 & MTP8/50 PA Part number 88970501 MTP6/50 & MTP8/50 4.3''TFT-LCD compact resistive touch panels, 65536 colors, LED backlight Graphical resolution : 480 x 272 pixels Wide viewing angle : 70° horizontally and vertically

Contextual Info: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high

1308F

Abstract: GRM39 HK1608 NJG1308F
Contextual Info: NJG1308F DRIVER-AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. QPACKAGE OUTLINE NJG1308F

SC74A

Abstract: SSOP14 SSOP20 VSP8 Package SC-74A
Contextual Info: PACKAGE OUTLINE TABLE I PACKAGE CODE TABLE 1. PACKAGE OUTLINE TABLE Suffix 6Pin 8Pin 10Pin 14Pin 20Pin SSOP V . _ O O VSP R . O _ _ . O* _ _ _ _ _ - - FLP K MTP6 F MTP6-1 F o o ' _ - - * : PRELIMINARY SSOP 2. PACKAGE CODE TABLE VSP NJRC vs . e ia j FLP6 MTP6

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP6P20E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d h ig h

Catalog JRC

Abstract: GRM39 HK1608 NJG1550F 34B DBM MARK
Contextual Info: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.

6679

Abstract: 6679 mosfet
Contextual Info: Spec. No. : C419J3 Issued Date : 2007.09.21 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTP6679J3 BVDSS ID RDSON -30V -50A 10mΩ Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic

M 3 SOT-23-6

Contextual Info: パッケージ外形図 SOT-23-6 MTP6 2.9±0.2 +0.1 0.13 -0.03 5 4 1 2 3 0.6 +0.2 1.6 - 0.1 6 2.8±0.2 1.9±0.2 0.3±0.1 0.1 0 . 1 M AX +0.2 1.1 - 0.1 0.95 単位 : mm Ver.2004-03-10

Contextual Info: パッケージ外形図 MTP6 2.9±0.2 +0.1 0.13 -0.03 5 4 1 2 3 0.6 +0.2 1.6 - 0.1 6 2.8±0.2 1.9±0.2 0.3±0.1 0.1 0 . 1 M AX +0.2 1.1 - 0.1 0.95 単位 : mm

1691-03

Abstract: NJG1102F1 GRM39 HK1608 48.888 MHZ
Contextual Info: NJG1102F1 800MHz 帯低雑音増幅器 GaAs MMIC •概要 NJG1102F1 は低雑音、高利得、高 IP3 を特徴し、 800MHz 帯ディジタル携帯電話端末での使用を主目的 とした低雑音 GaAs MMIC 増幅器です｡ パッケージには MTP6-1 を採用しました。

Contextual Info: MTP60N06HD Preferred Device Power MOSFET 60 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

Contextual Info: 23/06/2014 www.crouzet.com Programmable touch panels MTP6/50 & MTP8/50 RD Part number 88970494 MTP6/50 & MTP8/50 4.3''TFT-LCD compact resistive touch panels, 65536 colors, LED backlight Graphical resolution : 480 x 272 pixels Wide viewing angle : 70° horizontally and vertically

A13F

Contextual Info: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.

Contextual Info: MOTOROLA Order this document by MTP6P20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6P20E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP6N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP6N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP6N6

Contextual Info: MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is

MTP6N60

Abstract: MTP6N6
Contextual Info: Æ 7 SGS-THOMSON MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE MTP6N60 V DSS R DS on *d 600 V 1.2 a 6A • HIGH VOLTAGE - 600 V FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR OPERATIONS AT> 100KHz • EASY DRIVE FOR REDUCED COST AND SIZE

MTPG

Abstract: MTPG0
Contextual Info: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

motorola mosfet MTP6N60E

Abstract: MTP6N60E MTP6N6 AN569
Contextual Info: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS

pd 242

Abstract: AN569 MTP60N10E7
Contextual Info: MTP60N10E7 Preferred Device Advance Information TMOS 7 E-FET  High Energy Power FET N–Channel Enhancement–Mode Silicon Gate http://onsemi.com This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient