MTP50 Search Results

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: io ducta., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP50N06V TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

MTP50P03HDL

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP50P03HDL Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL

TP50N

Abstract: 06vl
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM

Contextual Info: MTP50N06E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D)38 @Temp (øC)100# IDM Max (@25øC Amb)160 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

MTP50N05EL

Contextual Info: MTP50N05EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)15 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

MTP50N06V

Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP50N06V FEATURES •Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in

AN569

Abstract: MTP50N06V
Contextual Info: MTP50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

M50P03HDL

Abstract: AN569 MTP50P03HDL m50p03
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

M50P03HDLG

Abstract: m50p03hdl m50p03 mtp50p03hdlg 1250 snappy AN569 MTP50P03HDL TF218
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

TP50P03

Contextual Info: MOTOROLA O rder this docum ent by M TP50P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50P03HDL HDTMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced h ig h -c e ll density HDTMOS power FET is

Contextual Info: MTP50N06EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

MTP50N06EL

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP50N06EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: MTP50N06V
Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

Contextual Info: MTP50P03HDL Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)15 I(D) Max. (A)50# I(DM) Max. (A) Pulsed I(D)31 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ

TMOS E-FET

Abstract: AN569 MTP50N06VL
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.032 OHM

AN569

Abstract: MTP50N06V 221A-06
Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

MTP50N03

Abstract: mtp50n03hdl AN569 MTP50P03HDL TF218
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

MTP50N05E

Contextual Info: MTP50N05E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM

MTP50N06VL

Abstract: mtp5 AN569
Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

M50P03HDL

Abstract: m50p03 1250 snappy mtp50p03hdl AN569
Contextual Info: MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for

nh TRANSISTOR

Contextual Info: MTP50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power