MT931228TR Search Results

transistor C3467

Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Contextual Info: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

SM01127

Abstract: SM01097
Contextual Info: sAUm New Product BS/CS Converter MICs SANYO MI C L i n e - u p f o r DBS C o n v e r t e r Antenna dtc L-o c a 1 O s c i 1 1 a t i o n M o d u l s : S M O S A N Y O Mi c r o w a v e O s c i 1 1a L o r S e r i e s F e a t u r e s *A sm all lead -ind uctance s tru c tu re has been achieved, using a bare chip of GaAs MES FET.

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

C4858

Abstract: C4406 C-4401 C3771 C4864 C4402 C4863 c4407 2SC377 C4401
Contextual Info: SAfiYO VERY HIGH-FREQUENCY TRANSISTORS FOR CATV TV TUNER,VTR USE. 1 . C A T V U s O o n v ö ir-t srM C P C4404 C3774 C3778 C3771,C4270, C4856* C3776 C3776 Local OSC , 0 C4401, C4402, C4406 C4407 C3771,C4269, C4270 C43'64, C4365 1st IF Amp C4856*. C4863*

Contextual Info: saHyo New Product BS/CS Converter MICs SANYO MI C Line-up f or DBS C o n v e r t e r a|c L o c a 1 O s c i l l at. i o n M o d u 1 s : S M O S A N Y O M i c r - o w a v e O s o i 1 1ator- Sei- 1 e s F e a t u r e s #A small lead-inductance structure has been achieved, using a bare chip of GaAs MES FET.