MT6L61AT Search Results

MT3S07S

Abstract: MT3S04AS MT6L61AT
Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO

Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Maximum Ratings Ta = 25°C Characteristics Rating Symbol Unit Q1 Q2 Collector-base voltage VCBO 10 10

Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage

Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO

MT3S04AS

Abstract: MT3S07S MT6L61AT
Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Maximum Ratings Ta = 25°C Characteristics Rating Symbol Unit Q1 Q2 Collector-base voltage VCBO 10 10

Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製