MT3S18T Search Results

cbc 327

Abstract: BF 998 equivalent
Contextual Info: MT3S18T SPICE2G6 model parameters 20010806 NET LIST .SUBCKT MT3S18T 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN NPN + IS = + BF = + NF = + VAF = + IKF = + ISE = + NE = + BR = + NR = + VAR = + IKR = + ISC =

Contextual Info: MT3S18T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S18T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 1.4 dB, |S21e| = 12 dB f = 1 GHz

transistor amplifier VHF/UHF

Abstract: VHF-UHF Band Low Noise Amplifier mt3s18 VHF transistor amplifier circuit
Contextual Info: MT3S18T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S18T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics : NF = 1.4 dB, |S21e|2 = 12 dB f = 1 GHz

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or