MT28F016S2 Search Results

G1996

Contextual Info: ADVANCE MT28F016S2 |V |IC = R O N 2 MEG x 8 FLASH M E M O R Y 2 MEG x 8 S m a rtV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX

AS5V

Contextual Info: ADVANCE MT28F016S2 V 2 MEG x 8 FLASH M E M O R Y M IC R O N 2 MEG x 8 SVT-II , SECTORED S m art V oltage ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|lA MAX Second Generation SmartVoltage* Technology (SVT-II):

Contextual Info: ADVANCE |u |IC :R O N 2 meg x 8 EVEN-SECTORED FLASH MEMORY MT28F016S2 FLASH MEMORY S m ar tV o ltag e S V T -II • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX

Contextual Info: ADVANCE MT28F016S2 2 MEG x 8 FLASH MEMORY MICRON • quantumdevices,me. FLASH MEMORY 2 MEG x 8 S m a r tV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX

Contextual Info: ADVANCE M IC R O N 1 MT28F016S2 V 2 MEG x 8 FLASH MEMORY FLASH MEMORY 2 MEG x 8 S m artV o ltag e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX Second Generation SmartV oltage* Technology (SVT-II):

6REV

Contextual Info: ADVANCE -. TE C? x .N-StÜT ü H E MT28F016S2 FLASH MEMORY S m artV oltag e • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lO pA M A X Second Generation Sm artVoltage Technology (SVT-II):

MT28F160S2

Contextual Info: ADVANCE I^ IIC R D N M T28F160S2 1 MEG x 16. 2 MEG x 8 FLASH M EM O R Y FLASH MEMORY 1 MEG x 16, 2 MEG x 8 S m a r t V o lt a g e SVT-II , SECTORED ERASE • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 6 4 K B / (32K-word) erase blocks

Quantum Devices

Contextual Info: ADVANCE MICRON 2 MEG x 8 E V E N - S E C T O R E D F L ASH M E M O R Y FLASH MEMORY MT28F016S3 I QUANTUM Devices, HC. 3V Only, Dual Supply FEATURES * * * * * * * * Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX 3V-only, dual-supply operation:

Contextual Info: ADVANCE M IC Z R O N I 2 MEG x 8 EVEN-SECTORED FLASH MEMORY FLASH MEMORY MT28F016S3 3V Only, Dual Supply • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10nA MAX 3V-only, dual-supply operation:

MT28F016S3VG-9

Abstract: TRS090 A4 marking Quantum Devices
Contextual Info: OBSOLETE ADVANCE 2 MEG x 8 EVEN-SECTORED FLASH MEMORY MT28F016S3 FLASH MEMORY 3V Only, Dual Supply FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10µA MAX 3V-only, dual-supply operation:

Contextual Info: OBSOLETE ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 FLASH MEMORY SMARTVOLTAGE SVT-II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect

Contextual Info: ADVANCE MT28F160S2 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16,2 MEG x 8 FLASH MEMORY S m a rtV o lta g e S V T -II , SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 64KB/(32K-word) erase blocks Programmable sector protect

Micron CMOS 1987

Contextual Info: ADVANCE 2 M EG x 8 MEMORY' MT28F016S3 FLASH MEMORY 3V Only, Dual Supply • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lOfiA MAX 3V-only, dual-supply operation: 2.7V to 3.6V Vcc 2.7V to 3.6V or 5V ±10% Vpp