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    MT108 MOTOROLA TRANSISTOR Search Results

    MT108 MOTOROLA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    MT108 MOTOROLA TRANSISTOR Datasheets Context Search

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    MT108 motorola transistor

    Abstract: mt108 MMFT108T1 SMD310
    Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3


    Original     		MMFT108T1/D MMFT108T1 261AA) MT108 MT108 motorola transistor mt108 MMFT108T1 SMD310 PDF

    MT108

    Abstract: MMFT108T1
    Contextual Info: MOTOROLA SEMICONDUCTOR ~ w TECHNICAL Order this document byMMH108T1/D DATA Field Effect ~ansistor MMFTI08TI N-Channel Enhancement-Mode Logic Level SOT-223 TMOS- 2,4 DRAIN 1 GATE @ CASE 318E+4, STVLE 3 SOT-223 ~0-261AA MAXIMUM RATINGS I Rating I Drain-t&SourceVoltage


    Original     		byMMH108T1/D MMFTI08TI OT-223 0-261AA) MT108 602-2H609 108T1/D MT108 MMFT108T1 PDF