MT 1392 Search Results

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

SK100 transistor

Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
Contextual Info: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14

N22 Schalenkern

Abstract: Siemens Ferrite N47 Siemens Ferrite B65541 EFD20 trafo ETD54 n62 R6KE Siemens Ferrite B64290 Siemens Ferrite n67 EC70 N27 siferrit n27
Contextual Info: Inhaltsverzeichnis Bauformen-Übersicht Bauformnummern-Verzeichnis SIFERRIT-Werkstoffe Seite 5 11 25 31 Allgemeines - Begriffsbestimmungen Anwendungs-, Verarbeitungshinweise Verpackung 103 121 163 Angaben zur Qualität Normen und Vorschriften 177 181 RM-Kerne

siemens ferrite n22 p14

Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Contextual Info: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches

Contextual Info: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V

Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT8JTF12864AZ – 1GB MT8JTF25664AZ – 2GB MT8JTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3 functionality and operations supported as defined in the component data sheet

MT8KTF25664AZ

Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ – 1GB MT8KTF25664AZ – 2GB MT8KTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ – 1GB MT8KTF25664AZ – 2GB MT8KTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3L functionality and operations supported as defined in the component data sheet

2SA1339

Abstract: 2SC3393
Contextual Info: Ordering number: EN 1392A 2SA1339/2SC3393 N0.1392A PNP/ NPN Epitaxial P lanar Silicon Transistors High-Speed Switching Applications Features • ■ • • Very small-sized package permit t i n g sets to be small-sized, slim High breakdown voltage: V c e o = ~ 50V

MT8KTF51264

Abstract: mt8k MT41K128M8 MT8KTF25664 EV80A TN-04-42 v80a
Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ – 1GB MT8KTF25664AZ – 2GB MT8KTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ – 1GB MT8KTF25664AZ – 2GB MT8KTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C-A) • DDR3L functionality and operations supported as defined in the component data sheet

MT8KTF51264HZ-1G9

Abstract: MT8KTF51264HZ-1G6
Contextual Info: 1GB, 2GB, 4GB x64, SR 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B2, B4) • DDR3L functionality and operations supported as defined in the component data sheet

MT8KTF51264HZ-1G6

Abstract: MT8KTF25664HZ MT41K128M8 ddr3 VDDSPD 1.5 MT8KTF25664HZ-1G1 MT8KTF25664HZ-1G4 MT41K512M8 MO-268 MT8KSF51264HZ-1G4E1 mt8k
Contextual Info: 1GB, 2GB, 4GB x64, SR 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B) • DDR3L functionality and operations supported as defined in the component data sheet

MT41K512M8

Contextual Info: 1GB, 2GB, 4GB x64, SR 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT8KTF12864AZ – 1GB MT8KTF25664AZ – 2GB MT8KTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C-A) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: 1GB, 2GB, 4GB x64, SR 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B2, B4) • DDR3L functionality and operations supported as defined in the component data sheet

DDR3L 1600 SODIMM

Abstract: MT8KTF51264HZ-1G9
Contextual Info: 1GB, 2GB, 4GB x64, SR 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B) • DDR3L functionality and operations supported as defined in the component data sheet

MT41K512M8

Contextual Info: 1GB, 2GB, 4GB x64, SR 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B2, B4) • DDR3L functionality and operations supported as defined in the component data sheet

TROMPETER 105-1468

Contextual Info: D A T A C O N T A I N E D I K T H I S DO CU MENT IS P R O P R IET A R Y TO TROMPETER E L E C T R O N IC S INC. A N D S H A L L NOT B E D I S C L O S E D , C O P I E D O R U S ED F O R PR O C U H E N T O R M A N U F A C T U R E W IT H O U T EXPRESS W RITTEN PERM ISS ION .

2SA1339

Abstract: 2sc3393 mt 1392
Contextual Info: Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions • Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO= – 50V.

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION TAPING SPECIFICATION ITEM CODE P， Jan . 5 2 Jan .1 2 ム ICompany name changed ム ICompany name changed & IModi， fi~~t~on:. ， IAp~._~ DC100V， O . 001 F，土 5% 8 .0士0 . 3 .0 5 3 . 5 士O 1 .

Contextual Info: 8 2 THIS DRAWING ANO O tSIGN HEREON CON­ STITUTES A PROPRIETARY OESIGN OF PACKARD ELECTRIC DIVISION ANO IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION._ hro <x> O DO NOT SCALE S E A L IN G SURFACE MUST BE

2SC3393

Abstract: 2SA1339
Contextual Info: 2SA1339 / 2SC3393 Ordering number : EN1392C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim. High breakdown voltage : VCEO= – 50V.

SC141 triac

Abstract: SC142 DIAC st4 st4 diac SC151 SC1418 DIAC st2 SC1418* TRIAC triac SC140 DIAC GE ST2
Contextual Info: Bi-Directional Triode Thyristor Power Pac Triacs 6 A to 15 A R M S U p t o 6 0 0 V o lts Is o la te d a n d N o n -Is o la te d T a b A triac is a solid state silicon AC switch which may be gate triggered from an OFF-State to an ON-State for either polarity of applied voltage.

2SA1339

Abstract: 2SC3393 2sa133
Contextual Info: 2SA1339 / 2SC3393 Ordering number : EN1392C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim.