MSM511000B Search Results

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

1ST24

Abstract: MSC2312B-70YS9
Contextual Info: O K I Semiconductor M SC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 2312B -xxY S9/K S9 is a fully decoded 1,048,576-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 1-Mb DRAM s in SOJ MSM511000B packages mounted with

Contextual Info: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM5110OOB/BL_ 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

diagram of hi 3520

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The O KI M SC 2313B -xxY S8/K S8 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM511000B packages mounted with

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2312B-xxYS9/KS9 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 1-Mb DRAMs in SOJ MSM511000B packages mounted with

Contextual Info: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2313B-xxYS8/KS8 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM511000B packages m ounted with

BL-70

Contextual Info: O K I semiconductor MSM511000B/BL 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit ORAM Module: Fast Page Mode DESCRIPTION The OKI MSC2313B-xxYS8/KS8 is a fully decoded 1,048,576-w ord x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM511000B packages m ounted with

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

TT 104 N 14 KOF

Abstract: SC2313
Contextual Info: O K I Semiconductor MSC23136B/BL-xxBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and

Contextual Info: O K I Semiconductor MSC23109B/BL-XXDS3 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23109B/BL-xxDS3 is a fully decoded 1,048,576 word x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages and one 1-Mb

playback recorder

Abstract: VOICE RECORDER IC MSM6788 MSM6789A MSM6789L MSM5116100A
Contextual Info: ¡ Semiconductor MSM6789A/6789L ¡ Semiconductor MSM6789A/6789L SBC Solid-State Recorder IC GENERAL DESCRIPTION The MSM6789A/6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the MSM6789A/6789L has a stand-alone mode and a microcontroller interface

VOICE RECORDER IC

Abstract: 761A3 voice activated recorder circuit voice recorder circuit VOICE RECORDER circuits MSM6788 MSM6789A MSM6789L
Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C G EN ER A L DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

Contextual Info: O K I Semiconductor MTC8108M38-xx2A1 -01 DRAM CARD DESCRIPTION The MTC8108M36-xx2Al-01 is a 8M-byte dynamic RAM card composed of 2M-word x 36-bit, being a 88-pin 2-piece type card proposed by the DRAM card guide-line of JEIDA. This provides a built-in buffer IC together with the DRAM device.

A7E1

Contextual Info: O K I semiconductor M S M 5 1 1 0 0 0 B /B L 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The