MSL3 ROHS FBGA Search Results

MR4A16B

Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

FM23MLD16-60-BG

Abstract: FM23MLD16 fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed
Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz

FM23MLD16

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz

MR256DL08B

Contextual Info: MR256DL08B Dual Supply 32K x 8 MRAM FEATURES • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance

Contextual Info: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22LD16 FM22LD16-55-BG
Contextual Info: Preliminary FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

8Mbit FRAM

Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz

Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

MSL3 RoHS FBGA

Abstract: fm23mld16 FM21LD16-60-BG FM22LD16
Contextual Info: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

MR256DL08B

Contextual Info: MR256DL08B Dual Supply 32K x 8 MRAM FEATURES • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance

MR0DL08B

Contextual Info: MR0DL08B FEATURES Dual Supply 128K x 8 MRAM • 3.3 Volt VDD power supply with a range of 2.7V to 3.6V • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance

Contextual Info: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM • Organized as 64Kx16  Configurable as 128Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: MR256A08B FEATURES • • • • • • • • • 32K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures

BGA Package 0.35mm pitch

Abstract: 48BGA MR4A16B
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MR4A16BCYS35

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

MSL3 RoHS FBGA

Abstract: fm23mld16 failure rate
Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package

aec-q100 package

Abstract: MR4A16BCYS35R
Contextual Info: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package