Photo SCR
Abstract: SCR PNPN ma 2830 MSC1330 chip scr mxp1018 MXP1018-C
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die
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MXP1018-C
MSC1330
Photo SCR
SCR PNPN
ma 2830
chip scr
mxp1018
MXP1018-C
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MSC1330
Abstract: msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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AN565
30-watt
MSC-1330/A
MSC-1330/B,
MSC1330
msc 140 -10003
AN565
MSC Microwave
msc diode
MSC 1330 Microwave Transistor
T21004
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msc 140 -10003
Abstract: MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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Original
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AN565
30-watt
MSC-1330/A
MSC-1330/B,
msc 140 -10003
MSC1330
MSC 1330 Microwave Transistor
msc diode
AN565
1330 transistor
power semiconductor 1973
MSC transistors
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