Photo SCR
Abstract: SCR PNPN ma 2830 MSC1330 chip scr mxp1018 MXP1018-C
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die
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mxp1018-cmsc1330photo scrscr pnpn+3ma 2830chip scrmxp1018
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MSC1330
Abstract: msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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an56530-wattmsc-1330/amsc-1330/b+6msc1330msc 140 -10003msc microwavemsc diodemsc 1330 microwave transistort21004
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msc 140 -10003
Abstract: MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors
Contextual Info: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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an56530-wattmsc-1330/amsc-1330/b+7msc 140 -10003msc1330msc 1330 microwave transistormsc diode1330 transistorpower semiconductor 1973msc transistors
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