MSC LS1 Search Results

MIL-STD-750

Abstract: CK6001 UPS835LE3 1038A UPS1040E3 plaskon thomas shear UPS840e3 SEC77 qualify
Contextual Info: SCO TT SD ALE DI VI SIO N MSC POWERMITE 3 Qualification Data Completion Date: July 7, 2005 Purpose: To qualify 1 Mfg Location (PSI Technologies) (2) New Molding Compound (CK6001) (3) Matte Sn Lead Finish Reliability test Test Method Conditions SS Rejects

Motherboard dell precision 690

Abstract: aic-7880 RS6000 ibm 478 motherboard HP 9000 A500 Motherboard dell seagate logic board seagate hard disks seagate ST15150N Accelgraphics
Contextual Info: Pentium Pro Processor Workstation Performance Brief September 1996 Order Number: 242999-001 Pentium Pro Processor Workstation Performance Brief Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

sun* sparcstation 20

Abstract: HP 9000 A500 Motherboard dell precision 690 Accelgraphics aic-7880 ansys TD-400 pentium pro memory management indigo mechanical engineering project
Contextual Info: Pentium Pro Processor Workstation Performance Brief June 1997 Order Number: 242999-003 Pentium Pro Processor Workstation Performance Brief Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

1N7037

Abstract: msc ls1 1n7043CCT military part marking symbols jan
Contextual Info: 1N7037CCU1 Available on commercial versions SILICON DUAL SCHOTTKY POWER RECTIFIER 35 Amp, 100 Volt Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/730 DESCRIPTION This low-profile, Dual Schottky rectifier device is military qualified up to a JANTXV level for

Contextual Info: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSS10120 Compliant Silicon Carbide Schottky Power Rectifier 10A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

U4 Package

Contextual Info: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level

01071

Abstract: S10120
Contextual Info: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

1n6844

Abstract: 1N6844U3
Contextual Info: 1N6844U3 Available on commercial versions SILICON SCHOTTKY POWER RECTIFIER 40 A, 100 V Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/679 DESCRIPTION This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level

Contextual Info: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: MSiCSS05120CC Compliant Silicon Carbide Dual Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to

Contextual Info: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing

Contextual Info: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level

Contextual Info: 1N6842U3 60 Volts, 10 Amp Dual Schottky Common Cathode Center Tap Rectifier Compliant Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/680 DESCRIPTION This low-profile 1N6842U3 Schottky rectifier device is military qualified up to a JANTXV level

Contextual Info: 1N7039CCU1 Silicon Dual Schottky Power Rectifier 35 Amp, 150 Volt Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/737 DESCRIPTION This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability

Contextual Info: 1N6842U3 60 Volts, 10 Amp Dual Schottky Common Cathode Center Tap Rectifier Compliant Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/680 DESCRIPTION This low-profile 1N6842U3 Schottky rectifier device is military qualified up to a JANTXV level

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power

2N2857UB

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power