MSB12900Y Search Results

Contextual Info: N AMER PHILIPS/DISCRETE II ObE D ^ 1^53=131 Q01SQ71 T • MAINTENANCE TYPE I MSB12900Y for new design use MSB11900Y / V T - 3 3 -/5" PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

MSB12900Y

Abstract: j4 transistor MSB11900Y
Contextual Info: N AMER PHILIPS/DISCRETE t l □ tE D 1=1353=131 0 0 1 5 0 7 1 MAINTENANCE TYPE MSB12900Y for new design use MSB11900Y T-33-JS- PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI