MSB014 Search Results

BFG67

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

6267 ic pin details

Contextual Info: BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

transistor DATA REFERENCE handbook

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a

N70 transistor

Contextual Info: Philips Semiconductors 0031107 bbSSTBl 2 GHz RF power transistor DESCRIPTION T M 5 — APY^eliminaryspecification BFG10; BFG10/X N AUER PHILIPS/DISCRETE bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

Contextual Info: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

Contextual Info: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

transistor K 2937

Abstract: 367-12 BFG10 lc 7220
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor FEATURES • BFG1OW/X PINNING To be supplied. PIN DESCRIPTION 1 collector APPLICATIONS 2 emitter • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. 3 base

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

NPN N43

Abstract: NPN N37 BFG540 transistor N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

BF 212 transistor

Abstract: BFG67W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

transistor marking NEP ghz

Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

BF1212R datasheet

Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer

BFQ195

Abstract: BFG197 MCD158 MCD156
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification BFG197; BFG197/X;

marking CODE MH

Abstract: PHILIPS dual gate mosfets transistor 1G1
Contextual Info: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR

BFR91A transistor datasheet

Abstract: str- 6557 CA 5210 PL BFG93A
Contextual Info: DATA SHEET book, halfpage M3D071 BFG93A; BFG93A/X NPN 6 GHz wideband transistors Product specification Supersedes data of 1995 Sep 25 1998 Sep 23 Philips Semiconductors Product specification NPN 6 GHz wideband transistors FEATURES BFG93A; BFG93A/X PINNING

transistor marking NEP ghz

Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs

BFG540

Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFG590

Contextual Info: BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 — 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFG505W

Abstract: MLC040
Contextual Info: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures

BF752

Abstract: UHF transistor GHz MSB014
Contextual Info: PhiMp^emioonductor^^ • 711QÖBfa QObflbbS 56T M P H I N Product specification NPN 7 GHz wideband transistor FEATURES BF752 e PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION Code: V38

transistor smd zG

Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Contextual Info: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband