MS81 Search Results

MS8104166

Abstract: MSM518222A PEDS8104166-01
Contextual Info: PEDS8104166-01 1Semiconductor MS8104166 This version: Dec. 2001 Preliminary Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS8104166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.

MS8150

Abstract: MS8150-P2613 P2613
Contextual Info: GaAs Schottky Devices Low RS Flip Chip TM MS8150 - P2613 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-off Frequency > 500 GHz ● Large Gold Bond Pads

Contextual Info: MCC TM Micro Commercial Components MS820 THRU MS8100
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#










Features • • • • 8 Amp Schottky Barrier Rectifier 20 to 100 Volts Low Switching Noise

Contextual Info: PEDS81V06160V-01-01 1Semiconductor MS81V06160 This version: Oct. 1999 Preliminary 401,408-word x 16-bit FIFO memory GENERAL DESCRIPTION The MS81V06160 is a 6Mb FIFO (First-In First-Out) memory designed for 401,408 × 16-bit high-speed asynchronous read/write operation.

MS845

Abstract: MS860 MS880 MS8100 MS820 MS830 MS835 MS840
Contextual Info: MS820 THRU MS8100 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769










Features • • • • 8 Amp Schottky Barrier Rectifier 20 to 100 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability

TQFP128-P-1414-0

Abstract: BUT30
Contextual Info: OKI Semiconductor MS81V32321 MS81V32321-02 Issue Date: Mar. 22, 2005 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Contextual Info: Semiconductor MS81V10160 This version: Mar. 2000 Preliminary 664,320-word x 16-bit FIFO memory GENERAL DESCRIPTION The MS81V10160 is a 10Mb FIFO (First-In First-Out) memory designed for 664,320-words × 16-bit high-speed asynchronous read/write operation.

Contextual Info: OKI Semiconductor MS81V32321 MS81V32321-04 Issue Date: Feb. 24, 2006 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

MS8128SC

Contextual Info: Issue 3.0 : June 1989 MS8128SC-10/12/15 ly jg Q ^ 2 8 S C 128K x 8 CMOS SRAM M odule ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Pin Definition Features Access Times of 100/120/150 ns JEDEC Standard 32 pin DIL Footprint Operating Power

Contextual Info: OKI電子デバイス MS81V04166 99, 5作成 262,214 - Word X 8 - Bit X 2 Dual FIFO • 概要 MS81V04166は256kx8ビットの高速非同期リード／ライト動作を 行う２MビットFIFO （First-in First-out memory）の２素子をワンチップ化した合計４Mビットの容量を有す

Contextual Info: OKI電子デバイス MS8104166 98,12作成 262,214 - Word X 8 - Bit X 2 Dual FIFO • 概要 MS8104166は 256kx8ビ ットの 高速 非同 期リード ／ライト 動作 を 行う２ Mビ ッ ト FIFO （First-in First-out memory）の２素子をワンチップ化した合計４Mビットの容量を有す

MS81V10160

Abstract: DO13 package DO13 DO14 DO15
Contextual Info: Semiconductor MS81V10160 This version: Sep. 2000 Preliminary 664,320-word x 16-bit FIFO memory GENERAL DESCRIPTION The MS81V10160 is a 10Mb FIFO (First-In First-Out) memory designed for 664,320-words × 16-bit high-speed asynchronous read/write operation.

MS8104166A

Abstract: MSM518222A DO21 package
Contextual Info: OKI Semiconductor MS8104166A FEDS8104166A-01 This version: Nov.,21, 2002 Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS8104166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.

Contextual Info: OKI Semiconductor MS81V04160 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed asynchronous read/write operation.

opo7

Abstract: MS81V10160
Contextual Info: FJDS81V10160-01 電子デバイス 2000. 3 作成 MS81V10160 664,320-Word x 16-Bit FIFO memory Õ 'y ÑO ÖÆËÐõé=7†íVÌÕì§ËWóô¬µÌ¨ ÖÆË äåíÉ»P ÑOõéOÚÙÐäåí Oº•îíʦ»Âî)+æ ÔÐî;ÐئVîÌ äåíʹÈo-É»Pžðº¼ÉãO$[;гìئƲº¼Éã
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FJDS8104160

Abstract: MS8104160 MSM518222A TQFP100
Contextual Info: FJDS8104160-02 電子デバイス 2000.05.22 作成 MS8104160 Dual FIFO 262,214-Word x 8-Bit x2 •概要 MS8104160 は256kx8 ビットの高速非同期リード／ライト動作を行う２M ビット FIFO（First-in First-out memory）の２ 素子をワンチップ化した合計４M ビットの容量を有するデュアルタイプの FIFO です。２M ビット FIFO のそれぞれのリード

100-C

Abstract: D0201AD MS8100 MS880 MS890
Contextual Info: 8 Amp Schottky Rectifier MS880 - MS8100 : £ ' Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 -.375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD - I- 1 Microsemi Catalog Number

Contextual Info: Semiconductor MS81V06160 This version: Mar. 2000 Preliminary 401,408-word x 16-bit FIFO memory GENERAL DESCRIPTION The MS81V06160 is a 6Mb FIFO (First-In First-Out) memory designed for 401,408-words × 16-bit high-speed asynchronous read/write operation.

ms8128fkl

Abstract: ms8128fk
Contextual Info: 128 k x 8 SRAM Module molate MS8128FK-55/70/85 Issue 1.0 July 1988 ADVANCE PRODUCT INFORMATION ,072 x 8 CMOS High Speed Static RAM M osaic S em iconductor / - Pin Definition Features Inc. Fast Access Times of 55/70/85 55 ns Under Development JEDEC Standard 32 pin DIL footprint

Contextual Info: MCC TM Micro Commercial Components MS820 THRU MS8100
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"#










Features • • • • 8 Amp Schottky Barrier Rectifier 20 to 100 Volts Low Switching Noise

Contextual Info: JUP 8 6 1992 molaic 1M X 8 SRAM MS81000RKXA-85/10/12 Issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. Pin Definition 1,048,576 x 8 CMOS High Speed Static RAM vcc A0 A1 A2 A3 DO D1 A4 AS A6 A7 A8 A13 02 CS A1S A16 A17 A9 GND OE

Contextual Info: 128 K x 8 SRAM Module molate MS8128FK-35/45/55 Issue 1.0 April 1990 Mosaic Semiconductor inc. ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM \ Pin Definition Features Fast Access Times of 35,45,55 ns JEDEC Standard 32 pin D IL Footprint

MS81V04160A

Abstract: MSM51V8222A
Contextual Info: OKI Semiconductor MS81V04160A FEDS81V04160A-01 This version: Nov.,21, 2002 Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS81V04160A is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 262,214 x 8-bit high-speed asynchronous read/write operation.

Contextual Info: MS8128SC-55/70 Issue 3.0 : June 1989 28SC 128K x 8 CMOS SRAM M odule ADVANCE PRODUCT INFORMATION 131,072 X 8 CMOS High Speed Static RAM Features Fast Access Times of 55/70 JEDEC Standard 32 pin DIL Footprint Operating Power 115mW typ. Low Power Standby 40|xW (typ.)- U Version