MS2200 Search Results

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features • • • • • • 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle Refractory Gold Metallization

MS2200

Abstract: pin configuration of ic 112002 pulse power transistor
Contextual Info: MS2200 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring

MS2200

Abstract: ADVANCED POWER TECHNOLOGY
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features • • • • • • 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle Refractory Gold Metallization

5a65

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features • • • • • • 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle Refractory Gold Metallization

MSC1679

Abstract: MS2200
Contextual Info: MS2200 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Symbol VCBO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS TCASE = 25°C

MS2177

Contextual Info: UHF Applications UHF Pulsed Applications 400 - 950 MHz Pin GAIN TIC W Min (dB) Min (MHz) Min (W) SD1511-08 425 10 1.2 SD1474 425 48 MS2176 400-500 MS2177 Vcc 0jc PULSE DUTY PKG STYLE (V) WIDTH (J.SEC) CYCLE (%) Max (°C/W) 9.2 50 28 3 CW CW M105 10 6.8

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

SG3000EX24

Contextual Info: TO SH IBA SG3000EX24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • SG3000EX24 Unit in mm Repetitive Peak Off-State Voltage : Vd r m = 2500 V R.M.S On-State Current : I t R M S = 1600 A Peak Turn-Off Current : It GQM = 3000 A Critical Rate of Rise of On-State Current : di / dt = 400 A / jus

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are