JMSH0601AG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 1.4mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 197A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
Original |
PDF
|
|
|
|
JMSH0603PK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V, 83A, 2.8mΩ N-channel Power SGT MOSFET in TO-252-3L package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. |
Original |
PDF
|
|
|
|
JMSH0602AE
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60 V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 195 A maximum drain current, and 100% UIS tested reliability. |
Original |
PDF
|
|
|
|
JMSH0601AGQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60 V N-Ch Power MOSFET in PDFN5x6-8L package with 1.3 mΩ typical RDS(ON) at 10 V VGS, 225 A continuous drain current, and 81 nC total gate charge, suitable for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0601ATLQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package, featuring 328A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0605AGD
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60 V, 54 A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10 V VGS, low gate charge, and 100% UIS tested for power management and motor driving applications. |
Original |
PDF
|
|
|
|
JMSH0606AKQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 95A N-channel Power MOSFET in TO-252-3L package with 4.4 mΩ RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0603AKQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 2.6mΩ N-channel Power MOSFET in TO-252-3L package, with 151A continuous drain current, ultra-low RDS(ON), low gate charge, AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0601BGQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 1.0mΩ N-Ch Power MOSFET in PDFN5x6-8L package with 314A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0602AEQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 2.0mΩ N-Ch Power MOSFET in TO-263-3L package, with 224A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0605AGDQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 56A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0606AGQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V N-channel Power MOSFET in PDFN5x6-8L package with 3.7 mΩ RDS(ON) at 10V VGS, 103A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
|
JMSH0606AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 90A N-channel Power MOSFET with 4.4 mΩ RDS(ON) at 10V VGS, TO-252-3L package, suitable for power management, motor driving, and switching applications. |
Original |
PDF
|
|
|
|
JMSH0606AG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V N-channel Power MOSFET with 3.7 mΩ RDS(ON) at 10V VGS, 98A continuous drain current, PDFN5x6-8L package, suitable for power management, motor driving, and switching applications in industrial and consumer systems. |
Original |
PDF
|
|
|
|
|
|
JMSH0606AU
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60 V, 62 A N-channel Power MOSFET in PDFN3x3-8L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, featuring low gate charge and high avalanche energy rating for power management and motor driving applications. |
Original |
PDF
|
|
|
|
JMSH0601ATL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 348A continuous drain current, low gate charge, and ultra-low ON-resistance for power management and switching applications. |
Original |
PDF
|
|
|
|
JMSH0602AGQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60 V N-channel Power MOSFET in PDFN5x6-8L package with 1.9 mΩ typical RDS(ON) at 10 V VGS, 168 A continuous drain current, and low gate charge, suitable for high-efficiency power applications. |
Original |
PDF
|
|
|
|
JMSH0602AG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V 1.9mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 175A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and motor driving applications. |
Original |
PDF
|
|
|
|
JMSH0603PG
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V, 118A, 2.1mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low on-resistance, high current capability, and optimized gate charge for power management and load switch applications. |
Original |
PDF
|
|
|
|
JMSH0602AC
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V, 1.8mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages, with 195A continuous drain current, low gate charge, and ultra-low on-resistance for power management and switching applications. |
Original |
PDF
|
|
|
JMSH0601AG
