MS-H-06 Search Results
MS-H-06 Datasheets (24)
Jiangsu JieJie Microelectronics Co Ltd
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JMSH0603PK
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 83A, 2.8mΩ N-channel Power SGT MOSFET in TO-252-3L package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0601AG
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Jiangsu JieJie Microelectronics Co Ltd | 60V 1.4mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 197A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0601AGQ
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Jiangsu JieJie Microelectronics Co Ltd | 60 V N-Ch Power MOSFET in PDFN5x6-8L package with 1.3 mΩ typical RDS(ON) at 10 V VGS, 225 A continuous drain current, and 81 nC total gate charge, suitable for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0602AE
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Jiangsu JieJie Microelectronics Co Ltd | 60 V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 195 A maximum drain current, and 100% UIS tested reliability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0605AGD
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Jiangsu JieJie Microelectronics Co Ltd | 60 V, 54 A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10 V VGS, low gate charge, and 100% UIS tested for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0606AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 95A N-channel Power MOSFET in TO-252-3L package with 4.4 mΩ RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0601ATLQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package, featuring 328A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0602AEQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 2.0mΩ N-Ch Power MOSFET in TO-263-3L package, with 224A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0603AKQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 2.6mΩ N-channel Power MOSFET in TO-252-3L package, with 151A continuous drain current, ultra-low RDS(ON), low gate charge, AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0601BGQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 1.0mΩ N-Ch Power MOSFET in PDFN5x6-8L package with 314A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0606AU
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Jiangsu JieJie Microelectronics Co Ltd | 60 V, 62 A N-channel Power MOSFET in PDFN3x3-8L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, featuring low gate charge and high avalanche energy rating for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd | 60 V N-channel Power MOSFET in PDFN5x6-8L package with 1.9 mΩ typical RDS(ON) at 10 V VGS, 168 A continuous drain current, and low gate charge, suitable for high-efficiency power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0602AG
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Jiangsu JieJie Microelectronics Co Ltd | 60V 1.9mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 175A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and motor driving applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0601ATL
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Jiangsu JieJie Microelectronics Co Ltd | 60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 348A continuous drain current, low gate charge, and ultra-low ON-resistance for power management and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0606AK
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Jiangsu JieJie Microelectronics Co Ltd | 60V 90A N-channel Power MOSFET with 4.4 mΩ RDS(ON) at 10V VGS, TO-252-3L package, suitable for power management, motor driving, and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0606AG
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Jiangsu JieJie Microelectronics Co Ltd | 60V N-channel Power MOSFET with 3.7 mΩ RDS(ON) at 10V VGS, 98A continuous drain current, PDFN5x6-8L package, suitable for power management, motor driving, and switching applications in industrial and consumer systems. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0605AGDQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V 56A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd | 60V N-channel Power MOSFET in PDFN5x6-8L package with 3.7 mΩ RDS(ON) at 10V VGS, 103A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0602AK
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Jiangsu JieJie Microelectronics Co Ltd | 60V 2.2mΩ N-Ch Power MOSFET in TO-252-3L package with 195A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, motor driving, and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH0603AK
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Jiangsu JieJie Microelectronics Co Ltd | 60V 2.6mΩ N-Ch Power MOSFET in TO-252-3L package with 145A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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