MS-4-H DIODE Search Results

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

zener diode sz 6

Abstract: SZ-10N27 zener diode sz SZ-10NN27 iz10 Figure1 SFPZ-68 SPZ-G36
Contextual Info: 4-8 Power Zener Diode VZ V lZ = 1mA, momentary 28±3.0* PR (W) (ms) 1500 Package Axial (Body Diameter/Lead Diameter) 5 Axial(φ10.0/φ1.3) Part Number IZSM (A) Tj VDC (V) Single Rectangular (ms) (°C) Wave IR IR(H) RZ Tstg (µA) Ta VZ Temperature (Ω) (µA)

Contextual Info: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C

Contextual Info: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

50Q2

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

2SK1539

Abstract: F10W90 tccc DIODE KU 105 D
Contextual Info: H V X '> U -X /\°7 -M 0 S F E T HVX S eries P ow er M OSFET M flN -ä 2SK1539 OUTLINE DIMENSIONS F10W90] 900V 10A f c à iìj •A *S M (Ciss ö '/h S U , if \z V n )U • 7 .- < " j ^ - y 'y s ^ h t m • A C 2 4 0 V » A * X '|' ix 'y?y?ms ¿ %  © B Œ ® §!

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: S A MS UN G E L E C T R O N I C S MJD122 INC 42E 3> B 7 cJ b m 4 2 QQQT023 2 Q S M G K NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H igh D C Current Gain Built-In a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix

MM451H

Abstract: MM452 MM450H MM550H mm555h MM452D MM452F MM551H MM552D package 12
Contextual Info: M M 450 /M M 5 50. MM451/MM551, M M 452 /M M 5 52, M M 455 /M M 5 55 MS Analog Switches M M 4 5 0 / M M 5 5 0 , MM 451/M M 5 51 M M 4 5 2 / M M 5 5 2 , M M 4 5 5 /M M 5 5 5 M O S analog s w itc h e s general description The MM450, and MM550 series each contain

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

OMRON LY2 iec255 relay

Abstract: OMRON LY4 iec255 50a relay socket PT08 PT08QN PT11 PT14 PTF08A PTF08A-E PTF11A
Contextual Info: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Dielectric strength: 2,000 V. Built-in diode models added to the LY Series. Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or

OMRON LY2 iec255 relay

Abstract: ac induction motor of 1/4 hp OMRON LY2 relay ac induction motor of single phase of 1/4 hp OMRON LY4 ac induction motor of 1.5 hp HP 450 motor OMRON LY3 iec255 relay ac induction motor of single phase of 1/2 hp OMRON iec255
Contextual Info: Omron A5 Catalogue 2007 419-518 11/9/06 11:03 am Page 442 General Purpose Relay – LY A Miniature Power Relay • Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are

PYF11A

Abstract: 50-902-0 MY3N-D2 MY3N PY11-02 MY2F MY3-02 MY4-02 PY11 PY11QN
Contextual Info: General-purpose Relay MY An Improved Miniature Power Relay with Many Models for Sequence Control and Power Applications A wide range of relay variations including ones with operation indicators, built-in diodes, etc. Arc barrier standard on 3- and 4-pole Relays.

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

PYF11A

Abstract: J001 MY2F MY4F PYF11A DATASHEET MY3-02 MY4-02 MY4Z-02 PY11 PY11-02
Contextual Info: General-purpose Relay MY An Improved Miniature Power Relay with Many Models for Sequence Control and Power Applications • A wide range of relay variations including ones with operation indicators, built-in diodes, etc. • Arc barrier standard on 3- and 4-pole Relays.

Contextual Info: s î M IK R D n SKiiP 262 GD 060 - 351 WT Absolute Maximum Ratings Symbol V a lu e s Units 600 400 200 400 - 5 5 . . . + 150 2500 200 400 1450 10,5 V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/ns °C | C onditions1 IGBT & Inve rse Diode VcES Operating DC link voltage

25J2

Abstract: BR220-100
Contextual Info: Philips Components b r 22 o s e r i e s _ A _ Supersedes February 1988 data DUAL BREAKOVER DIODES The B R 220 is a range o f m o n o lith ic diffu sio n -iso la te d glass-passivated dual b id ire c tio n a l breakover diodes in th e TC1-220AB o u tlin e , available in a + /— 12% tolerance series o f no m inal breakover voltage.

Contextual Info: • International H Rectifier 4655452 DGlt.755 ‘m INTERNATIONAL RECTIFIER *INR b5E » SERIES IRK.F102 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F a st tu rn -o ff th yristo r F a s t re c o v e ry d io d e H igh s u rg e c a p a b ility

BF996

Abstract: BF 996 S BF996S
Contextual Info: Tem ic BF996S Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode £ Applications Electrostatic sensitive device. Observe precautions for handling. *' Input and mixer stages in UHF tuner. Features • Integrated gate protection diodes

BR210-100

Contextual Info: Philips Components BR210 s e r ie s _ A_ Supersedes February 1988 data BREAKOVER DIODES A range o f glass-passivated b id ire c tio n a l breakover diodes in the TO -220 A C o u tlin e , available in a + /— 12% tolerance series o f nom inal breakover voltage. T h e ir c o n tro lle d breakover voltage and peak

Contextual Info: • International HU Rectifier 4ÔSSMS5 0 0 1 b 7 4 7 INTERNATIONAL ölß RECTIFIER ■ INR bSE SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F ast re c o v e ry d io d e H igh s u rg e c a p a b ility

Gate Turn-Off Thyristors

Abstract: BTV59 M0601 diode gfm GTO switching circuit BTV59D-850R BY359 IEC134 GTO switching test PH 21 DIODE
Contextual Info: BTV59D SERIES J V_ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE Fast gate tu rn -o ff th y ris to rs w ith anti parallel connected fast soft-recovery diodes in T O -2 3 8 A A . They are suitable fo r use in high frequency inverters, pow er supplies and m o to r c o n tro l systems re quirin g a