MS-4-H DIODE Search Results

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

zener diode sz 6

Abstract: SZ-10N27 zener diode sz SZ-10NN27 iz10 Figure1 SFPZ-68 SPZ-G36
Contextual Info: 4-8 Power Zener Diode VZ V lZ = 1mA, momentary 28±3.0* PR (W) (ms) 1500 Package Axial (Body Diameter/Lead Diameter) 5 Axial(φ10.0/φ1.3) Part Number IZSM (A) Tj VDC (V) Single Rectangular (ms) (°C) Wave IR IR(H) RZ Tstg (µA) Ta VZ Temperature (Ω) (µA)

Contextual Info: SMDA05-6 SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR _ Stand-off Voltage - 5.0 Volts Peak Pulse Power -1 7 5 Watts SO-8/MS-012-AA FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ,H R ñ ♦ Offers ESD protection in accordance with IEC1000-4-2

Contextual Info: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C

D671

Abstract: d676 D-673 D674
Contextual Info: Bulletin 12071/A International S Rectifier sd263C.ssol s e rie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 4 .5 ms re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 4 5 0 0 V

Contextual Info: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

090Q

Abstract: AN9321 HUF76407DK8 HUF76407DK8T MS-012AA TB334 BCW25
Contextual Info: in ter« ! HUF76407DK8 D ata S h e e t O c t o b e r 199 9 F ile N u m b e r 4 7 1 2 .4 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.0900, VGS = 10V BRANDING DASH

Contextual Info: b l E ]> • ^24^ M ITS U B IS H I 2^ D D I MS ?* ! DISCRETE ■ MI T S 017 MITSUBISHI LASER DIODES ML4XX19 SERIES SC FOR OPTICAL COMMUNICATION SYSTEMS TYPE NAME DESCRIPTION FEATURES M L 4 X X 1 9 is an AIGaAs semiconductor laser which • Low droop provides a stable, single transverse mode oscillation

Contextual Info: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

50Q2

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

2SK1539

Abstract: F10W90 tccc DIODE KU 105 D
Contextual Info: H V X '> U -X /\°7 -M 0 S F E T HVX S eries P ow er M OSFET M flN -ä 2SK1539 OUTLINE DIMENSIONS F10W90] 900V 10A f c à iìj •A *S M (Ciss ö '/h S U , if \z V n )U • 7 .- < " j ^ - y 'y s ^ h t m • A C 2 4 0 V » A * X '|' ix 'y?y?ms ¿ %  © B Œ ® §!

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

01e3

Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Contextual Info: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Dsei 2x101-12A

Abstract: 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P
Contextual Info: 2x60 ' 2x 160 V Typ e T Vju = 150-C ► N ew RAM V A _ _ _ 1 'fav @ T1c d=0.5 A ^FRMS *FSM 10 ms °C "^VJM A 4 5 °C A vF @ IF m ax. tfr typ . TVJ * 150°C V A T1VJ=25°C ns lR H @ -d i/d t TVJ = 100°C

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: S A MS UN G E L E C T R O N I C S MJD122 INC 42E 3> B 7 cJ b m 4 2 QQQT023 2 Q S M G K NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H igh D C Current Gain Built-In a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix

BZW0419B

Contextual Info: FAGOR Transient voltage suppressors diodes T h e p lastic m aterial c a rrie s U L re co g n itio n 9 4 V -0 . BZW04 B Series. 400 W ./l ms. expo. Plastic Case: DO-1S. Outline: 2 M axim um R e v e rs e L e a k a g e C u rrent Type B id irection al Kk M

Contextual Info: "2 -4 -r'style split-bobbin transform ers for triple-output pp applications (type MT1 S q nal bn:. e xl Rn dt - d Is linn nl tr h nsfon111; is ter n ! [ i , ' o ; r ( j u : .sor h p p sat o n s II I hi no r i r . v s z a s r;itf;(i to IOCj VA ra l e d in lei ms o ‘ t u e I nal DC;

MM451H

Abstract: MM452 MM450H MM550H mm555h MM452D MM452F MM551H MM552D package 12
Contextual Info: M M 450 /M M 5 50. MM451/MM551, M M 452 /M M 5 52, M M 455 /M M 5 55 MS Analog Switches M M 4 5 0 / M M 5 5 0 , MM 451/M M 5 51 M M 4 5 2 / M M 5 5 2 , M M 4 5 5 /M M 5 5 5 M O S analog s w itc h e s general description The MM450, and MM550 series each contain

water flow sensor

Abstract: diode ed 85 "water Flow Sensor" DIODE ED 32306700
Contextual Info: s e M IK R D n V rsm/V rrm V SKWD 7000/02 400 SKWD 7000/04 600 SKWD 7000/06 Conditions T v|= 25 °C; II IT Tvj = Rthjw Volw Tvj max. Tstg Pw max. W Case o If = 180°C = 19 kA 22 kA 10 ms â VF V TO i2t = = CO = = H Volw = 4 l/m in ; Tw = 40 °C ; ED = 100%

relais STPI

Abstract: 25949 cenelec relay schema power double 300 IP400 stpi 284174 9324 diode
Contextual Info: RELAIS INSTANTANE IN S TA N TA N E O U S RELAY SERIE 2 5 9 4 RT - 4 PDT CA R A C TER ISTIQ U ES GENERALES GENERAL C H A R A C T E R IS TIC S 14 A 10 A 0,2V A , mini 5V ou 5m A Ag CdO doré 350 A - 30 ms 30.10e m anœ uvres Intensité nom inale therm ique Pouvoir de m anœ uvre voir courbes