MS-4-H DIODE Search Results

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

zener diode sz 6

Abstract: SZ-10N27 zener diode sz SZ-10NN27 iz10 Figure1 SFPZ-68 SPZ-G36
Contextual Info: 4-8 Power Zener Diode VZ V lZ = 1mA, momentary 28±3.0* PR (W) (ms) 1500 Package Axial (Body Diameter/Lead Diameter) 5 Axial(φ10.0/φ1.3) Part Number IZSM (A) Tj VDC (V) Single Rectangular (ms) (°C) Wave IR IR(H) RZ Tstg (µA) Ta VZ Temperature (Ω) (µA)

Contextual Info: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C

Contextual Info: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

Contextual Info: b l E ]> • ^24^ M ITS U B IS H I 2^ D D I MS ?* ! DISCRETE ■ MI T S 017 MITSUBISHI LASER DIODES ML4XX19 SERIES SC FOR OPTICAL COMMUNICATION SYSTEMS TYPE NAME DESCRIPTION FEATURES M L 4 X X 1 9 is an AIGaAs semiconductor laser which • Low droop provides a stable, single transverse mode oscillation

Contextual Info: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

50Q2

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

2SK1539

Abstract: F10W90 tccc DIODE KU 105 D
Contextual Info: H V X '> U -X /\°7 -M 0 S F E T HVX S eries P ow er M OSFET M flN -ä 2SK1539 OUTLINE DIMENSIONS F10W90] 900V 10A f c à iìj •A *S M (Ciss ö '/h S U , if \z V n )U • 7 .- < " j ^ - y 'y s ^ h t m • A C 2 4 0 V » A * X '|' ix 'y?y?ms ¿ %  © B Œ ® §!

Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: S A MS UN G E L E C T R O N I C S MJD122 INC 42E 3> B 7 cJ b m 4 2 QQQT023 2 Q S M G K NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H igh D C Current Gain Built-In a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

diode DSDI 12

Contextual Info: DSDI 60 IF AVM = 63 A VR R =M 1 4 00- 1 8 00 V trr = 4 0 ns Super Fast Recov ery Diode VRSM VRRM Type A C TO - 2 4 7 A D V V 1 4 00 1 4 00 DSDI 60- 1 4 A 1 600 1 600 DSDI 60- 1 6A 1 8 00 1 8 00 DSDI 60- 1 8 A C A C A = Anode, C = C athode Symbol IFRM S IFA VM

OMRON LY2 iec255 relay

Abstract: OMRON LY4 iec255 50a relay socket PT08 PT08QN PT11 PT14 PTF08A PTF08A-E PTF11A
Contextual Info: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Dielectric strength: 2,000 V. Built-in diode models added to the LY Series. Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or

OMRON LY2 iec255 relay

Abstract: ac induction motor of 1/4 hp OMRON LY2 relay ac induction motor of single phase of 1/4 hp OMRON LY4 ac induction motor of 1.5 hp HP 450 motor OMRON LY3 iec255 relay ac induction motor of single phase of 1/2 hp OMRON iec255
Contextual Info: Omron A5 Catalogue 2007 419-518 11/9/06 11:03 am Page 442 General Purpose Relay – LY A Miniature Power Relay • Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are

OMRON LY2 iec255 relay

Abstract: electromechanical relay omron ly2 12 v pcb mount relay LY2-D OMRON LY2 PTF08-E 12 V dpdt relay switch LY1F LY4N-D2 OMRON LY2 220/240 VAC
Contextual Info: Electromechanical Relays General-purpose Relay LY A Miniature Power Relay • Equipped with arc barrier. • Dielectric strength: 2,000 V. • Built-in diode models added to the LY Series. • Single-pole and double-pole models are applicable to operating

OMRON LY2 iec255 relay

Abstract: LY2 relay LY4N-D2 OMRON LY2 220/240 VAC omron LY4N PT08 PT08QN PT11 PT14 PTF08A
Contextual Info: General-purpose Relay LY A Miniature Power Relay • Equipped with arc barrier. • Dielectric strength: 2,000 V. • Built-in diode models added to the LY Series. • Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC,

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

PYF11A

Abstract: 50-902-0 MY3N-D2 MY3N PY11-02 MY2F MY3-02 MY4-02 PY11 PY11QN
Contextual Info: General-purpose Relay MY An Improved Miniature Power Relay with Many Models for Sequence Control and Power Applications A wide range of relay variations including ones with operation indicators, built-in diodes, etc. Arc barrier standard on 3- and 4-pole Relays.

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

PYF11A

Abstract: J001 MY2F MY4F PYF11A DATASHEET MY3-02 MY4-02 MY4Z-02 PY11 PY11-02
Contextual Info: General-purpose Relay MY An Improved Miniature Power Relay with Many Models for Sequence Control and Power Applications • A wide range of relay variations including ones with operation indicators, built-in diodes, etc. • Arc barrier standard on 3- and 4-pole Relays.