MS 1051 SIMILAR Search Results

MA47047

Abstract: MA47266 MA47123 MA47111 ma47110
Contextual Info: an A M P company Axial Lead PIN Diodes V 2.00 Case Style 54 Features • • • • • Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available

ma47111

Abstract: MA47100 1N5719 equivalent MA47600
Contextual Info: an A M P company Axial Lead PIN Diodes V 2.00 Case Style 54 Features • • • • • Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available

ma47110

Abstract: MA47047
Contextual Info: m ^ aù k v M n 4 M P com pany Axial Lead PIN Diodes V 2.00 Features • • • • • Case Style 54 Glass Hermetic Sealed Packages Screenable to JAN-TXV and Military Specifications General Purpose Switch Diodes Low Distortion Attenuator Diodes Tape and Reel Packaging Available

MA4PH301

Abstract: ma47111 MA4PH401 ma47266 1N5719 equivalent JANTX 1N5719 DIODES Cross Reference 1N5719 MA47120 MA47123
Contextual Info: Axial Lead PIN Diodes Features • GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES ■ HIGH VOLUME MANUFACTURING CAPABILITY ■ TAPE AND REEL PACKAGING

MA47266

Abstract: ma-47266 DIODES Cross Reference
Contextual Info: AfaCOM m an A M P com pany Axial Lead PIN Diodes Case Style 54 Features • G lass H erm etic S ealed P ack ag es • S creen ab le to JAN-TXV a n d M ilitary S pecifications • G e n e ra l P u rp o s e S w itch D io d e s • Low D isto rtio n A tte n u a to r D io d es

1n6963

Abstract: 1N6979 1N6970 1N6950 1N6956 1N6986 1N6972 1N6978 1N6966 1N6953
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2004. INCH-POUND MIL-PRF-19500/718 12 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

1N6620

Abstract: 1N6621 1N6620U 1N6620US 1N6625 1N6625U 1N6625US 1N6623U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 January 2010. INCH-POUND MIL-PRF-19500/585H 20 October 2009 SUPERSEDING MIL-PRF-19500/585G 2 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER,

33178

Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

DIODE 1N649

Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

2N2907AUE1

Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Contextual Info: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

JESD22-A101

Abstract: JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/674 16 July 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

qm marking code sot-23

Abstract: 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 24 October, 2003. INCH-POUND MIL-PRF-19500/694A 24 August 2003 SUPERSEDING MIL-PRF-19500/694 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,

DD 127 D TRANSISTOR

Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

1N6626

Abstract: 1N6626U 1N6626US 1N6627 1N6631 1N6631U 1N6631US 1n6628 jantx 1N6629 JANTX 1N6631 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 March 2009. MIL-PRF-19500/590H 4 December 2008 SUPERSEDING MIL-PRF-19500/590G 25 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

manson

Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

33178

Abstract: 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2003. INCH-POUND MIL-PRF-19500/420G 30 December 2002 SUPERSEDING MIL-PRF-19500/420F 9 October 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER

tl 4311

Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 DO-35 silicon Rectifier diodes MIL-PRF-19500N
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2010. MIL-PRF-19500/503F w/AMENDMENT 1 28 July 2010 SUPERSEDING MIL-PRF-19500/503F 25 March 2009 PERFORMANCE SPECIFICATION SHEET

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Corning 7052

Abstract: coin sensors
Contextual Info: Select Products Here Go DESCRIPTION TOX 9005 P-N Gallium Arsenide Infrared-Emitting Diode FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. ● Designed to emit near - infrared radiation when forward biased

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UES1104 UES1105 UES1106 RECTIFjERS High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching

Contextual Info: DUAL POWER SCHOTTKY RECTIFIERS i | £ HR2 30 Amp Pk per diode, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Packaged Design TO-3 • High Efficiency for Low Voltage Supplies • Dual Schottky Rectifiers in a Single Package

SD335C

Contextual Info: DUAL POWER SCHOTTKY RECTIFIERS 60A Pk, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Package Design TO-3 • High Efficiency for Low Voltage Supplies • 45V Blocking @ Rated Tjmax • 50V Repetitive Surge Voltage USD335C

Microsemi HR2

Contextual Info: MICROSEMI CORP/ Ü1ATERTOUN SGE 3> • 13471b3 GülBl^ó 4^7 ■ U N I T DUAL POWER SCHOTTKY RECTIFIERS yig|g 60A Pk, 45V USD335CHR2 USD345CHR2 H J - o 3 - £ { FEATURES DESCRIPTION • • • • • • • The USD320C series has two Schottky barriers arranged in a common cathode

2N7292

Abstract: 2N7298 2N7294
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 July 2008. INCH-POUND MIL-PRF-19500/605C 16 April 2008 SUPERSEDING MIL-PRF-19500/605B 4 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY