MRF50 Search Results

mrf5015

Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

MRF501

Abstract: F-501 MRF502
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF501 MRF502 T h e RF Line HIG H FREQUENCY TRANSISTORS NPN SILICO N HIG H -FR E Q U EN C Y TRANSISTORS NPN SILICON . . . designed p r im a r ily fo r use in high gain, lo w -n o ise a m p lifie r, o s c illa to r, and m ix e r a p p lic a tio n s . Can also be used in U H F c o n v e rte r

F5003

Abstract: 1N4734
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF5003

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5003 MRF5003R1 N-Channel Enhancement-Mode The MRF5003 is designed for broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF5003

Contextual Info: MRF5003 VHF POWER MOSFET DESCRIPTION: PACKAGE STYLE The ASI MRF5003 is common source device, designed for broadband amplifier applications at frequencies to 520 MHz. FEATURES: • PG = 9.5 dB @ 3.0 W 512 MHz • Surface mount package MAXIMUM RATINGS ID 8.0 A

MRF5007

Abstract: AN211A AN215A AN721 430B-01 motorola an721 application
Contextual Info: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF502

Abstract: MRF501 F501 MRF-501
Contextual Info: MRF501 SILICON MRF502 T h e R F L i n e _ | NPN SILHCON R F S M ALL-SIG N AL TRANSISTO RS NPN SILICON R F S M A LL-S IG N A L TRANSISTO RS . . . d e s ig n e d p r im a r ily f o r u se in h ig h -g a in , lo w - n o is e a m p lif ie r ,

j35 fet

Abstract: mrf5015 Nippon capacitors MRF5015 equivalent
Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 15MAR02 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Nippon capacitors

Abstract: equivalent of transistor BFT 51
Contextual Info: MOTOROLA Order th is docum ent by MRF5007/D SEMICONDUCTOR TECHNICAL DATA f The RF MOSFET Line MRF5007 RF Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5007 is designed for broadband comm ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

SU 179 transistor

Abstract: s227
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­

mrf5015

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 MRF5007R1 RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 7 is d esign ed for broadband com mercial and industrial applications at frequencies to 520 M H z. The high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

MRF5003

Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

mrf5015

Abstract: F 2452 mosfet MOSFET RF POWER TRANSISTOR VHF Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor LAST SHIP 02APR04 The RF MOSFET Line MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

F-501

Abstract: F501 f501m
Contextual Info: I MOTOROLA SC XSTRS/R 4bE D F b3b7254 0CH4712 b I flOTb MOTOROLA • SEMICONDUCTOR MRF501 MRF502 TECHNICAL DATA The R F Line HIGH FREQUENCY TRANSISTORS NPN SILICON HIGH-FREQUENCY TRANSISTORS NPN SILICON . . . designed p r im a r ily f o r use in high-gain , lo w -n o is e a m p lifie r,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 7 is d e s ig n e d fo r b ro a d b a n d c o m m e rc ia l and in d u s tria l a p p lic a tio n s at fre q u e n c ie s to 520 M Hz. The high ga in and b ro a d b a n d

MRF503

Abstract: motorola TO-72 dimension ANSI Y14.5
Contextual Info: M O TO R O L A SC X ST R S / R F MbE D fe3b7ES4 001251*1 2 B i n O T b ? ^ / - / 5 MOTOROLA ISEMICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MRF5031 DM0 Suffixes: HX, HXV IIIIIII IMPN S ilic o n H igh-Frequency T ra n sisto r Processed per MIL-S-19500/xxx

Z7 DIODE

Abstract: motorola an215a application "RF power MOSFETs" transistor motorola 236 zener diode z10 AN211A AN215A AN721 MRF5007 MRF5007R1
Contextual Info: MOTOROLA Order this document by MRF5007/D SEMICONDUCTOR TECHNICAL DATA MRF5007 MRF5007R1 The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

"RF power MOSFETs"

Abstract: AN211A AN215A AN721 MRF5035 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5035/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5035 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device