MPSH10 H PARAMETERS Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42E D MPSH10/11 Hi ?*Jb414H 000^072 4 E3SÎ1GK NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 ° C )

pulse h1251

Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
Contextual Info: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common

MPSH10

Abstract: MPSH11 MPS-H10 MPSH10 H parameters
Contextual Info: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc

MPSH10

Abstract: UHF UHF Transistors
Contextual Info: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc

mpsh10

Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10

Abstract: MPSH10 H parameters
Contextual Info: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C

TRANSISTOR C 3223

Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
Contextual Info: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10G

Abstract: MPSH10 MPSH10RLRA MPSH10RLRAG MPSH10RLRP MPSH10RLRPG mps h10
Contextual Info: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

Contextual Info: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

MPSH10 H parameters

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number

MPSA10

Abstract: MPSH10 mps h10
Contextual Info: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

transistor polar

Abstract: mpsh
Contextual Info: MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 °C ) Derate above 2 5 “ C Collector Dissipation (Tc= 2 5 °C )

MPSH10

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

MPSH10 s parameters

Abstract: MPSH10
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

CBVK741B019

Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

distress beacon

Abstract: dn-101 transistor ztx zetex transistors TO92 285T distress ZTX688B DIAC application MPSH10 S parameters
Contextual Info: Design Note 9 Issue 2 June 1995 Automotive Security Systems and RF Transistor Products Design Note 10 Issue 2 June 1995 3V Distress Beacon + 12V Antenna 680 1M + 3V Encoder I.C. 15T The majority of modem automotive alarms employ coded RF systems that key a VHF carrier wave with a unique or

MPS-H10 equivalent

Abstract: mpsh10 equivalent MPS-H10
Contextual Info: The RO TO39-3 Series of One-Port SAW Resonators Electrical Connections Equivalent LC Model This one-port, two-terminal SAW resonator is bidirectional. The terminals are interchangeable with the exception of circuit board layout. The following equivalent LC model is valid near resonance:

Contextual Info: RO2100 • • • • • Ideal for 295 MHz Oscillators Low Series Resistance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS 295.05 MHz SAW Resonator Pb The RO2100 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It

MPS-H10

Abstract: MPS-H10 equivalent
Contextual Info: RO2100 • • • • • Ideal for 295 MHz Oscillators Low Series Resistance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS 295.05 MHz SAW Resonator Pb The RO2100 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It