MPS9 Search Results

MPS-92

Abstract: mps92 MPS93
Contextual Info: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector −Emitter Voltage VCEO 15 12 Vdc Collector −Base Voltage VCBO 30 30 Vdc Emitter −Base Voltage

MPS9468

Abstract: MPS948 MPS9418 TO92A mps434 2n150
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE MPS6591 MPS8000 MPS9416 MPS9416A MPS9417 N N N N N MPS9417A MPS9418 MPS9434 MPS9466 MPS9466A H,'E VcEinft lc COMPLE­ C* fj mm mas MENTARY MHz (MHz) TYPE Pd Ic v CE0 (mW) (A)

MPS3563

Abstract: MPS918
Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (9731 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MPS918* MPS3563 Amplifier TVansistors NPN Silicon MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Collector-Emitter Voltage VCEO 15 12 Vdc Collector-Base Voltage

MPS3563

Abstract: mps918
Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage

MPS911

Abstract: 75RC tjm sot23 MBR911 2223 TO-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors D esigned for low noise, w ide dyn a m ic range fro n t-e n d am p lifie rs and low -noise VCO's. Available in a surface-m ountable plastic package, as well as

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon •Motorola Preferred Device COLLECTOR 3 2 BASE" 1 EMITTER MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Col lector-E m itter Voltage Rating VCEO 15 12 Vdc C ollector-B ase Voltage

mps1983

Contextual Info: MOTOROLA SEMICONDUCTOR MPS901 MPS1983 TECHNICAL DATA T h e R F L in e 1C = 3 0 m A HIGH FREQUENCY TRANSISTORS N P N S IL IC O N H IG H - F R E Q U E N C Y T R A N S IS T O R NPN SILICION . . . designed prim arily for use in high-gain, low-noise small-signal

MPS3563

Abstract: MPS918
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Rating Unit Symbol MPS918 MPS3563 12 Vdc 30 Vdc v CEO 15 C ollector-Base Voltage VCBO 30 E m itter-B ase Voltage vebo 3.0 C ollector-Em itter Voltage

MPS918

Abstract: MPS918 equivalent MPS3563
Contextual Info: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage

PN3563

Contextual Info: FAIRCHILD SEM ICO ND UCT OR fl4 D E | B 4 b T b 7 4 0057414 4 | 3469674 FAIRCHILD SEMICONDUCTOR » e 84D 274 14 D m PN918/MPS918/FTS0918 PN3563/MPS3563/FTS03563 m A Schlum berger Com pany NPN Small Signal High Frequency Am plifiers & Oscillators . 15 dB Min @ 200 MHz (PN/FTS0918)

MPS9633C

Abstract: MPS9634C MPS9631T MPS9634 MPS9632F
Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO ICBO VCB V M IN V I M IN MPS9630C MPS9W0S MPS9630T MPS9630U MPS9631F NPN NPN NPN NPN NPN TO-92 TO-92 TO-92 TO-92 TO-92 (721 (72) (72) (72) (72) 12 12 12 12 16 20 20 20 20 25 MPS963IG MPS9631H MPS9631I MPS9631J MPS963IK

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPS918 Features • • Simplifies Circuit Design Reduces Component Count • Case Material: Molded Plastic.

MPS9681F

Abstract: MPS9681T MPS9682H mps9682 mps9681
Contextual Info: DEVICE TYPf PACKAGE BVCEO BVCBO BVEBO tCBO IVI M I N I VI M I N I VI M I N MPS9680U MPS9681F MPS9681G MPS9681H MPS968H PNP PNP PNP PNP PNP TO-92 TO-92 TO-92 TO-92 TO-92 72 (72) (72) (72) (72) 12 18 18 18 18 20 25 25 25 25 MPS9681J MPS9681K MPS9681L MPS9681S

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

MPS918 equivalent

Abstract: BC237 MPS3563 transistor MPS3563
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage

Contextual Info: MOT OROL A SC MPS3563 XSTRS/R F 1EE 0 | b3b?ZS4 □ Oflfe.Gfc.'i 0 | For Specifications, See MPS918 Data M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage vCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Rating Unit v EBO 5.0

MPS3563

Contextual Info: MPS918* MPS3563 M AXIM U M RATINGS Symbol Rating M PS918 M PS3563 Unit Collector-Em itter V oltage v CEO 15 12 V dc C ollector-Base V oltage v CBO 30 30 V dc Em itter-Base V oltage v EBO 3.0 2.0 Vdc Collector Current — C o n tin u o u s 'c 50 m Adc Total Device D issip a tio n a Ty\ = 25<’C

Contextual Info: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPS918 Features • • Simplifies Circuit Design Reduces Component Count Pin Configuration Bottom View NPN Silicon Amplifier Transistor

Contextual Info: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as

MPSH30 transistor

Abstract: MPSA09 MPS91B MPS8099 MPS834 MPSA05 MPSA06 MPSA10 MPSA13 MPSA20
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum R; tings Type No. ^ceo ^CEO ^E80 (V) Min (V) Min (V) Min M PS8099 80 M PS834 40 MPS91B 30 MPSA05 Pd m 'c (A) eTc=25°c 'cBO (mA) (V)' (MA) Max Max ^CB 6 0.625 0.5 0.1 60 5 0.625 0.2 0.5 20 15 3 0.355 0.05 0.01

MPS3563

Abstract: MPS918 MPS3563G MPS3563RLRA MPS3563RLRAG MPS918G Marking code mps
Contextual Info: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage