MPS H10 Search Results

Contextual Info: b O cl7M44 O O D S bb ? ÔS3 • MPS MP3274 m Fault Protected 32 Channel, 12-Bit Data Acquisition Subsystem M icro Power Systems FEATURES • Complete 32-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and TriState Outputs • Fast Conversion, less than 15p.S

hd44780 lcd controller Verilog

Abstract: verilog code arm processor PL041 7Segment Display LIN Verilog source code ARM1156T2F-S Hsync Vsync VGA arm7 TJA1080 7SEGMENT verilog code for uart ahb
Contextual Info: Application Note 227 Using the Microcontroller Prototyping System with the example reference design Document number: ARM DAI0227A Issued: August 2009 Copyright ARM Limited 2009 Application Note 227 Using the Microcontroller Prototyping System with the example reference design

Contextual Info: r PRO D U C T NO SEE TABLE t $ * p * I «i ; 5 a • L S1 Ï ï » I I äS K » L . i t ¡1* til ? * & f i . 5 | g ; « u *8« 13.71 ± 0 .3 5 [ 0 .5 4 * 0 .0 1 4 ] ” ? r 3 o *c >» n .4 [0 .0 1 ] TYP V r f n 4 .0 0 [0 .1 6 ] VIEW C U _ •» io + 0 .5 0

JB marking transistor

Abstract: 945 crb transistor marking JB
Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Contextual Info: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

MSD2714AT1

Abstract: MSD2714AT1G JB marking transistor Marking code mps
Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage

MMBTH10

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic

transistor marking JB

Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
Contextual Info: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25

Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage

Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

MMBTH10M3T5G

Abstract: marking AJ Marking code mps MMBTH10M3
Contextual Info: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount

transistor marking code 3EM SOT-23

Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Contextual Info: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6

marking Specific Device Code Date Code sot-23 4l

Abstract: transistor 3em
Contextual Info: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm FEATURES • NPN Silicon 0.120(3.04) ‡ 0.110(2.80) ‡ +LJK&XUUHQW*DLQ%DQG:LGWK3URGXFW

transistor marking 3em

Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Marking code mps

Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board

transistor marking 3em

Abstract: MMBTH10LT1
Contextual Info: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit

MPS 0826

Abstract: MSD2714AT1 SMD310
Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board

Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board

MPS 0826

Abstract: MSD2714AT1 SMD310
Contextual Info: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board

Contextual Info: ELECTROMAGNETIC FLOWMETERS FMG-400 Series 2500 $ Basic Model ߜ ±0.5% Accuracy ߜ Clear, Backlit LCD Display ߜ Rotational Display ߜ Easily Programmed ߜ Easy Wiring ߜ Unique Noise Suppressor Flanged: Teflon PFA lining; phthalic acid resin coating Power Supply: 100 to 240 Vac,