MOTOROLA OPTO 6PIN Search Results
MOTOROLA OPTO 6PIN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLP3475W |
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Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 | Datasheet | ||
TLP223GA |
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Photorelay (MOSFET output, 1-form-a), 400 V/0.12 A, 5000 Vrms, DIP4 | Datasheet | ||
TLP4590A |
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Photorelay (MOSFET output, 1-form-b), 60 V/1.2 A, 5000 Vrms, DIP6 | Datasheet | ||
TLP170GM |
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Photorelay (MOSFET output, 1-form-a), 350 V/0.11 A, 3750 Vrms, 4pin SO6 | Datasheet | ||
TLP3122A |
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Photorelay (MOSFET output, 1-form-a), 60 V/1.4 A, 3750 Vrms, 4pin SO6 | Datasheet |
MOTOROLA OPTO 6PIN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HC08MP16
Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
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BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic | |
H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
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b3b725S H11AV1 H11AV2 H11AV3 H11AV3A H11AV1A H11AV2A H11AV3A diode b3l | |
Contextual Info: Packaging Information Tape and Reel Specifications and Packaging Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure |
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OD-123, SC-59, SC-70/SOT-323, OT-23, OT-143 OT-223, SO-14, SO-16, | |
4n33Contextual Info: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30* |
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4N29/A, 4N32/A 00flbb23 4N29A, 4N32A, 4n33 | |
triac driver opto moc3021
Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
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3b755S 30A-02 OJJ20 730B-02 730C-02 730D-Q2 triac driver opto moc3021 MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr | |
2n2222 npn transistor footprint
Abstract: 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2N2222 2n2222 sot323 JAPANESE TRANSISTOR 2SC
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OT-23 2N2222 MMBT2222. OT-143 2n2222 npn transistor footprint 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2n2222 sot323 JAPANESE TRANSISTOR 2SC | |
MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
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b3b7255 MQC8060/D E54915^ C13S0 OJJ20 730B-02 730C-02 730D-Q2 MOC8060 ANSI 60 CE01 Motorola optoisolator lead form options | |
H11AV1
Abstract: H11AV2 H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18
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H11AV1/D H11AV1 H11AV2 H11AV1/D* H11AV1A H11AV2A h11av2 equivalent H11AV1 Application 730A-04 8UA18 | |
Contextual Info: MOTOROLA SC D IO D ES/O PTO b4E D b 3 fc,7 2 5 S DOflhbSfl Efib MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO ca VDE UL C SA BS ® SEMKO SETI DEM KO NEMKO BABT 4N38 4N38A 6-Pin D IP O ptoisolators Transistor Output [CTR = 20% Min] STYLE 1 PLASTIC The 4N38 and 4N 38A devices consist of a gallium arsenide infrared em itting diode |
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4N38A | |
H11AV1Contextual Info: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices |
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H11AV1/D H11AV1 11AV2 H11AV2 | |
1N6095Contextual Info: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: |
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1N6095 1N6096 | |
Contextual Info: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices |
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H11AV1/D H11AV1 H11AV2 | |
730A-04Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL C8A ®®®® 8ETI 8EMK0 DEMKO NEMKO BUT GlobalOptobolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR • 20% Min] [CTR « 10% Min] [CTR ■ S% Min] ‘ Motorola Preferred Device |
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MOC8204, MOC8205 MOC8204* MOC8206 MOC82Q4 MQC8206 730A-04 | |
MTIL113
Abstract: motorola opto 6pin
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OWI-2447 2H609 140k77 MTlLl13m MTIL113 motorola opto 6pin | |
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Motorola Application Note AN-780A
Abstract: an-780A motorola AN-780A AN 780a application note an-780a Application Note Motorola 780a an780a MQC3011 motorola an780a m003010
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M003010 MOC3010 OC3011 OC3012* MOC3011 MOC3012 M003010/3011/3012 AN-780A. Motorola Application Note AN-780A an-780A motorola AN-780A AN 780a application note an-780a Application Note Motorola 780a an780a MQC3011 motorola an780a | |
381 motorola
Abstract: DIODE 8827
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MTIL113/D TIL113 MTIL113 381 motorola DIODE 8827 | |
RP210
Abstract: MEPCO 3 phase analog controller sine wave schematic MC14584BCP R54 Transistor LED DIP2 VR1 7805 mc14584bcp motorola AN1624 ITC122
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AN1624 ITC137 68HC708MP16 AN1624/D RP210 MEPCO 3 phase analog controller sine wave schematic MC14584BCP R54 Transistor LED DIP2 VR1 7805 mc14584bcp motorola AN1624 ITC122 | |
MTIL117
Abstract: Optoelectronics Device data motorola optoelectronics
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MTlLl17/D MT1LI17 MTIL117 MTlLl17 602-2W609 MTIL117~ Optoelectronics Device data motorola optoelectronics | |
ISO220Contextual Info: MOTOROLA Order this document by M4N25/D SEMICONDUCTOR TECHNICAL DATA TO UL <§•* CSA SET! BABT M4N25 6-Pin DIP Optoisolators Transistor Output STYLE 1 PLASTIC The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector. |
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M4N25/D M4N25 M4N25 ISO220 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & VDE UL & ®®®® C6A 8e n BEMKO DEMKO NEMKO BABT GlobalOptotsotator 6-Pin D IP O ptoisolators Darlington Output Low Input Current H11B1* H11B3 [CTR • 500% Min] [CTR *100% Min] •Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting |
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H11B1 H11B3 H11B1* H11B3 | |
TP-104-01-04
Abstract: Mepco-Centralab clarostat 140 Clarostat Sensors and Controls MOTOROLA brushless dc controller clarostat POTENTIOMETER MEPCO ITC137 S2011-36-ND CENTRALAB
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AN1624 ITC137 68HC708MP16 AN1624/D TP-104-01-04 Mepco-Centralab clarostat 140 Clarostat Sensors and Controls MOTOROLA brushless dc controller clarostat POTENTIOMETER MEPCO S2011-36-ND CENTRALAB | |
4n3bContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE GlobalOptolsolator UL f t . CSA ®®®® SETI SEMKO DEMKO NEMKQ BABT 6-Pin DIP Optoisolators TVansistor Output 4N38 4N38A* [CTR = 20% Min] 'Motorola Preferred Device The 4N38 and 4N38A 1 devices consist of a gallium arsenide infrared |
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4N38A 4N38A* 4N38A VCC-10V 4n3b | |
til117 motorolaContextual Info: MOTOROLA Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA UL CSA SETI BABT M TIL117 6-Pin DIP Optoisolator Transistor Output STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. |
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MTIL117/D TIL117 MTIL117 MTIL117 til117 motorola | |
M4N35Contextual Info: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. |
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M4N35/D M4N35 M4N35 |