MOTOROLA GOLD RF Search Results

transistor BD 135

Abstract: capacitor J336 EQUIVALENT OF K 2843 J336 TPV8200B transistor k 2843
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­

Contextual Info: MOTOROLA Order this document by MHW7185A/D SEMICONDUCTOR TECHNICAL DATA The RF Line M HW 7185A M HW 7205A High Output Pow er Doubler 750 MHz CATV Am plifiers Motorola Preferred Devices Designed specifically for 750 MHz CATV applications. Features io n implanted, arsenic emitter transistors with an all gold metallization system.

bd135 equivalent

Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
Contextual Info: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold

b0135

Abstract: TP3015 MOTOROLA POWER TRANSISTOR 14 3B2S 1N4148 motorola rf Power Transistor mobile rf power amplifier transistor TRANSISTOR B0135 NPN 0/TRANSISTOR NPN B0135
Contextual Info: MOTOROLA SC XSTRS/R F 4bE J> m b3b7254 DGTSEGM 3 MOTOROLA ” 33" 07 SEMICONDUCTOR TECHNICAL DATA TP3015 The RF Line UHF P o w er T ran sisto r The TP3015 is designed fo r 900 MHz m obile stations in both analog and digital appli­ cations. It incorporates high value em itter ballast resistors, gold metallizations and offers

tp2304

Abstract: 88MHZ Arco 423
Contextual Info: 12E D | MOTOROLA t,3 t . ? a S 4 MOTOROLA SC O G flaaiS X S T R S /R 0 I F SEMICONDUCTOR TECHNICAL DATA TP2304 The RF Line VH F Power Transistor The TP2304 is designed for use in 12,5 V VHF amplifiers operating underdass A, B or C conditions. Its construction which incorporates gold metallization and diffused ballast resistors for

CATV MHW

Abstract: MHW7185A motorola mhw 110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW7185A MHW7205A High Output Power Doubler 750 MHz CATV Amplifiers Designed specifically for 750 M H z CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system.

110nF

Abstract: SO110
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 750 MHz CATV Conventional Hybrid Amplifier MHW7142 Designed specifically for 750 MHz CATV applications. Features ion-im­ planted arsenic emitter transistors with an all gold metallization system. • • •

CTB110

Abstract: MHW7142 XMD110
Contextual Info: MOTOROLA Order this document by MHW7142/D SEMICONDUCTOR TECHNICAL DATA The RF Line 750 MHz CATV Conventional Hybrid Amplifier MHW7142 Designed specifically for 750 MHz CATV applications. Features ion–implanted arsenic emitter transistors with an all gold metallization system.

RF NPN POWER TRANSISTOR C 10-50 GHZ

Abstract: 3 pin TRIMMER capacitor ATC100A MJD31C MRF6408 smd z12 transistor 6 pin SMD Z2 37281 smd transistor z4
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

airtronic capacitor

Abstract: airtronic air-tronic 470-860 mhz Power amplifier w xg transistor 470-860 mhz Power amplifier 5 w linear amplifier 470-860
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Pow er Transistor Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

Transistor motorola 513

Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Contextual Info: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed

470-860 mhz Power amplifier w

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

regulator 7805

Abstract: voltage regulator 7805 Transistor t3 smd motorola 7805 smd REGULATOR motorola IC 7805 motorola 7805 7805 regulator smd REGULATOR IC 7805 SMD motorola diode smd 7805 motorola
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b7254 GD^Slfl? ? ■ MOTb T '^ - O S MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP300^ The RF Line U H F P o w e r T ra n sisto r The TP3004 is designed for 900 M Hz bases stations in both analog and digital applica­ tions. It incorporates high value emitter ballast resistors, gold metallizations and offers a

MHW5382A

Contextual Info: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW6142

Abstract: 5Bp power
Contextual Info: MOTOROLA Order this document by MHW6142/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6142 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

BAS16

Abstract: MRF6409 DL110
Contextual Info: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high

MHW6182

Contextual Info: MOTOROLA Order this document by MHW6182/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6182 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW6222

Contextual Info: MOTOROLA Order this document by MHW6222/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6222 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

MHW5182A

Contextual Info: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

SMD Transistor z6

Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ smd ct3 transistor b 745
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

VQE 22

Abstract: VQE22 TPV598 air-tronic airtronic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor Designed for 4.0 watt stages in Band V TV transposer am plifiers. Gold m etallized dice and diffused em itter ballast resistors are used to enhance reliability, ruggedness and linearity.

MHW6182

Abstract: MHW-6182
Contextual Info: MOTOROLA Order this document by MHW6182/D SEMICONDUCTOR TECHNICAL DATA The RF Line 550 MHz CATV Amplifier MHW6182 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization

Contextual Info: MOTOROLA The RF Line CA922 CA922A VHF/UHF CATV Amplifiers Designed for broadband applications requiring low–distortion and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold