MOTOROLA FE SUFFIX Search Results

MHT10P10

Abstract: SM 8002 C NS 8002 1151
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode

2p50e

Abstract: 4336 MOSFET TB2P5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TB 2P 50E TM O S E -FE T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate The D2pAK package has the capability of housing a larger die

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet MTB2N40E TM O S E -FE T ™ High E nergy P o w er FET D2PAK fo r S u rfa c e M ount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.8 OHM N-Channel Enhancement-Mode Silicon Gate

8002 1028

Abstract: MRF69 mrf6985
Contextual Info: MOTOROLA SC XSTRS/R F m = E fe.3t.72SH t> 0012527 1 « 1 1 0 T b 7^ 33'fO MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MRF6985 M RF6986 DM0 Suffixes: m in i IMPN S ilic o n P u sh -P u ll RF P o w e r T ra n sisto rs HX, HXV Processed per

eel 16n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate

TTL 74ls21

Abstract: 74ls21
Contextual Info: g MOTOROLA SN54/74LS21 DUAL 4-INPUT AND GATE DUAL 4-INPUT AND GATE [ÏÏ1 R [ÏÏ1 M N [71 fe i vcc LOW POWER SCHOTTKY J SUFFIX CERAMIC CASE 632-08 GND N SUFFIX , D SUFFIX SOIC CASE 751A ORDERING INFORMATION SN54LSXXJ SN74LSXXN SN74LSXXD Ceramic Plastic

1N100E

Abstract: fr411
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTB1N100E TMOS E -FE T ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS on = 9-0 OHM N-Channel Enhancement-Mode Silicon Gate

20N03

Abstract: 20n03h
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM

14049U

Abstract: C14050B MC14049uB data only lt 7550
Contextual Info: MOTOROLA SC { L O G I C } 6 3 6 7 2 5 2 .MOTOROLA SC L O G IC TS ~ DE | . b3b75SE 007^54^ 9 8 0 7 9 549 D - MC14049UB MC14050B MOTOROLA CMOS SSI HEX BUFFERS (LOW -POW ER C O M P L E M E N T A R Y MOS) T h e M C 1 4 0 4 9 U B h e x in v e r t e r / b u f fe r a n d M C 1 4 0 5 0 B n o n ­

mc33202 schematic

Abstract: mc33202 schematic amp motorola MC33201 MC33201D MC33201P MC33201VD MC33201VP MC33202D MC33202P MC33202VD
Contextual Info: "791-fe&f MC33201 MC33202 MC33204 MOTOROLA é I Advance Information LOW VOLTAGE RAIL-TO-RAIL OPERATIONAL AMPLIFIERS Rail-to-Rail™ Operational Amplifiers The MC33201/2/4 family of operational amplifiers provide rail—to—rail operation on both the input and output. The inputs can be driven as high as

transistor 228 T3

Abstract: A 673 transistor 369A-13 MJD47 MJD50 TIP47 TIP50
Contextual Info: MOTOROLA Order this document by MJD47/D SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for line operated audio output amplifier, switchmode power supply drivers

Contextual Info: MOTOROLA Order this document by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor M JD 243* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e . . . designed for low voltage, low-power, high—gain audio amplifier applications.

Contextual Info: MOTOROLA Order this document by MBRB2060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Power Rectifier MBRB2060CT D2PAK Surface Mount Power Package M o to ro la P re fe rre d D e vic e Employs the use of the Schottky Barrier principle with a platinum barrier metal.

MOCD211

Contextual Info: MOTOROLA O rder this docum ent by M OCD211/D SEMICONDUCTOR TECHNICAL DATA MOCD211 Dual Channel Small Outline Optoisolators [CTR = 20% Min] Transistor Output M o to r o la P r e fe r r e d D e v ic e These devices consist of tw o gallium arsenide infrared emitting diodes

78T05

Abstract: 2N439 78T00
Contextual Info: g MOTOROLA M C78T00 Series Three-Am pere Positive Voltage Regulators This fam ily of fixed vollage regulators are m onolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy internal current lim iting, therm al shutdow n, and s a fe -a re a

transistor 30 j 127

Abstract: transistor d 965 al
Contextual Info: MOTOROLA Order this document by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 41C* Com plem entary Power Transistors PNP M JD 42C* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose amplifier and low speed switching applications.

Contextual Info: O rder this docum ent by M C78T00/D MOTOROLA MC78T00 Series Three-Ampere Positive Voltage Regulators This fam ily of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy internal current lim iting, therm al shutdow n, and s a fe -a re a

transistor d 965 al

Abstract: transistor j 127 TRANSISTOR TYPE 0235 k 351 transistor JD31C A 673 transistor LB 127 transistor transistor 30 j 127 transistor cb 458 Q 0265 R
Contextual Info: MOTOROLA O rder this docum ent by M JD31/D SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose amplifier and low speed switching applications.

motorola TO-252 package IC

Abstract: MTD4P05
Contextual Info: MOTOROLA •B SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD4P05 MTD4P06 Power Field Effect Transistors P-Channel Enhancement Mode Silicon Gate TM OS D PAK for Surface Mount or Insertion Mount TM O S PO W ER FE T s 4 A M P ER ES Y These TMOS Power FETs are designed for high speed, low loss

jis z 0237

Abstract: l 0734 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz

MTD20P03HDL

Abstract: 1000C 369A-13 AN569 014 IR MOSFET Transistor
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03H DL HDTM O S E -FE T ™ High D en sity P o w er FET DPAK for S u rfa c e M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD6P10E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M o to ro la P re fe rre d D e v ic e TM O S POW ER FET 6 .0 A M P E R E S 100 VO LTS P-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN M JD112* PNP Com plem entary Darlington Power Transistors M JD 117* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose power and switching such as output or driver stages

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip