MOTOROLA BALUN AN Search Results
MOTOROLA BALUN AN Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LMH9235IRRLR |
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3.3 GHz to 4.2 GHz single-ended to differential amplifier with integrated balun 12-WQFN -40 to 105 |
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| LMH9226IRRLR |
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Single-ended to differential 2.3 - 2.9 GHz low-power RF gain block with integrated balun |
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| LMH9135IRRLR |
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3.2 to 4.2 GHz differential to single-ended amplifier with integrated balun 12-WQFN -40 to 105 |
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| TRF37A32IRTVT |
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400M-1700MHz Dual Down Converter Mixer with Integrated IF Amp & RF Baluns 32-WQFN -40 to 85 |
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| TRF37B32IRTVR |
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700M-2700MHz dual Down Converter Mixer with Integrated IF Amp & RF Baluns 32-WQFN -40 to 85 |
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MOTOROLA BALUN AN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TPV 3100
Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
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AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission | |
RO3010
Abstract: C14A z14b
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MRF374/D MRF374 MRF374/D RO3010 C14A z14b | |
z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
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MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A | |
C3B KemetContextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device |
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MRF372/D 31anufacture MRF372 C3B Kemet | |
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Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this |
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MRF374/D MRF374 28rola, | |
transistor L1A
Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
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MRF374A/D MRF374A MRF374A/D transistor L1A 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB | |
MRF372
Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
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MRF372/D MRF372 MRF372 MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010 | |
RO3010
Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
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MRF374A/D MRF374A RO3010 motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B | |
J352Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this |
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MRF374A/D MRF374A MRF374A/D J352 | |
transistor j352Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this |
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MRF374A/D MRF374A transistor j352 | |
Vj3640Y
Abstract: transistor L1A
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MRF374/D MRF374 Vj3640Y transistor L1A | |
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Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this |
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MRF372/D MRF372 MRF372/D | |
uhf tv booster circuit diagram
Abstract: TV SIGNAL BOOSTER circuit diagram video balun schematic splitter, circuit diagram signal Splitter schematic UHF/Antenna MC44BC380 MC44BC380D Nippon capacitors TV booster diagram
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MC44BC380 MC44BC380 18GHz, uhf tv booster circuit diagram TV SIGNAL BOOSTER circuit diagram video balun schematic splitter, circuit diagram signal Splitter schematic UHF/Antenna MC44BC380D Nippon capacitors TV booster diagram | |
MRF373
Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
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MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13 | |
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Motorola 801
Abstract: transistor 801 diagrams LPF, HPF, BPF filter rf 2N2222 motorola MOtorola bpf BPF filter rf Silicon Tuner LNA 2N2222 motorola docsis 2N2222
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MC44C800/801 MC44C800/801 TQFP48EP MC44C800ribed Motorola 801 transistor 801 diagrams LPF, HPF, BPF filter rf 2N2222 motorola MOtorola bpf BPF filter rf Silicon Tuner LNA 2N2222 motorola docsis 2N2222 | |
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Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating |
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MRF899/D MRF899 MRF899 MRF899/D | |
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Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating |
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MRF899/D MRF899 MRF899/D* | |
nippon capacitors
Abstract: 2508051107Y0 3A412 MRF9210R3
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MRF9210/D MRF9210R3 nippon capacitors 2508051107Y0 3A412 MRF9210R3 | |
MRF9210
Abstract: DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X
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MRF9210/D MRF9210 MRF9210 DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X | |
J297
Abstract: mallory 150 series MRF899 BD136 5659065-3B
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MRF899/D MRF899 J297 mallory 150 series MRF899 BD136 5659065-3B | |
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Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 02APR04 The RF Line MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating |
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MRF899/D MRF899 MRF899 MRF899/D | |
MRF9120
Abstract: MRF9120S
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MRF9120/D MRF9120 MRF9120S MRF9120S | |
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Contextual Info: MOTOROLA Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating |
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MRF899/D MRF899 | |
MRF9120Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of this |
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MRF9120/D MRF9120 MRF9120S | |