MOSFET WITH SCHOTTKY DIODE Search Results

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

e3p1

Abstract: MOSFET 1052 NTMSD3P102R2 NTMSD3P102R2G NTMSD3P102R2SG
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die

E3p1

Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

e3p1

Abstract: NTMSD3P102R2SG MC 1200 Motor Control Board NTMSD3P102R2 NTMSD3P102R2G
Contextual Info: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die

Contextual Info: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.

diode TA 20-08

Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Contextual Info: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power

Contextual Info: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.

Contextual Info: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.

NTHD4P02F

Abstract: NTHD4P02FT1 NTHD4P02FT1G
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal

NTHD4P02FT1G

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

NTHD4P02FT1G

Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

NTMSD2P102LR2

Abstract: SMD310
Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

NTHD4N02F

Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

MCH3314

Abstract: SCH2805
Contextual Info: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

SMD diode MARKING 624

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals

Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals