MOSFET WITH PROTECTED Search Results

AN569

Abstract: NILMS4501N NILMS4501NR2 NILMS4501NR2G 4501N
Contextual Info: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless http://onsemi.com N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit

500w mosfet power amplifier circuit diagram

Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Contextual Info: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability

IRSF3010S

Abstract: IRSF3010 SMD-220 dual flipflop 7321
Contextual Info: Provisional Data Sheet No.PD-6.0027A IRSF3010 FULLY PROTECTED POWER MOSFET SWITCH General Description: Rating Summary: The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections.

Contextual Info: MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail highside power switch applications. The MIC5013 is compatible

quad mosfet array

Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Contextual Info: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance

wiring diagram for ge cr2943

Abstract: ceramic capacitor 33pf GE 4N35 4n35 optoisolator IRCZ44 IRF540 MIC5010 MIC5011 MIC5012 MIC5013
Contextual Info: MIC5013 Micrel MIC5013 Protected High- or Low-Side MOSFET Driver General Description Features The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail highside power switch applications. The MIC5013 is compatible

Contextual Info: LM9061 LM9061 Power MOSFET Driver with Lossless Protection Literature Number: SNOS738D LM9061 Power MOSFET Driver with Lossless Protection withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline surface mount package. General Description

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

RTH33

Abstract: IRCZ44
Contextual Info: MIC5013 Protected 8-pin Power MOSFET Predriver SEMICONDUCTOR PRELIMINARY INFORMATION THE INTELLIGENT POWER COMPANY General Description Features The MIC5013 is an 8-pin MOSFET predriver with over­ current shutdown and a fault flag. It is designed to drive

LIN opto isolator

Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.1 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: CA3130 peak detector about the IC ca3130 CA3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055
Contextual Info: CA3130, CA3130A Data Sheet October 2002 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

CA3130

Abstract: CA3130 peak detector IC1 CA3130 CURRENT TO VOLTAGE CONVERTER about the IC ca3130 CA3130 data sheet ca3130 equivalent IC1 CA3130 ca3130 equivalents CA3130 as a low pulse generator 2N3055 inverter schematic diagram
Contextual Info: CA3130, CA3130A Data Sheet August 1, 2005 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

200 Amp bridge mosfet

Abstract: a4940 A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5
Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

brush DC Motor control

Abstract: full bridge mosfet A4957 a4957s A495 QFN50 A4957SESTR-T full bridge mosfet driver dynamic braking unit schematic diagram
Contextual Info: A4957 Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

617DB-1024

Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

ESD 141

Abstract: ON10M
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

SPM6M080-010D

Abstract: SPM6M060-025D 010D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

564a

Abstract: UTT4815
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremely gate

TC4420

Abstract: TC4429 TC4429COA "MOSFET Drivers" TC429 TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA
Contextual Info: 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4420 TC4429 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC4420/4429 are 6A peak , single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.

n6302

Contextual Info: NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

N6302

Abstract: n6302 mosfet AN569 NIMD6302R2 SMD310 FET Sense
Contextual Info: NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while

high-speed power mosfet 2Mhz

Abstract: MAX5088 MAX5089
Contextual Info: 19-3944; Rev 0; 1/06 2.2MHz, 2A Buck Converters with an Integrated High-Side Switch The MAX5088/MAX5089 high-frequency, DC-DC converters with an integrated n-channel power MOSFET provide up to 2A of load current. The MAX5088 includes an internal power MOSFET to enable the