MOSFET VRM Search Results
MOSFET VRM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ICL7667MJA |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
|
||
| ICL7667MJA/883B |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
|
||
| AM9513ADIB |
|
AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
|
||
| CA3130AT/B |
|
CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
|
||
| CA3130T |
|
CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
|
MOSFET VRM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. |
Original |
||
ISL6622
Abstract: ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11 power supply 12v, 7v, 5v
|
Original |
ISL6622 ISL6622 FN6470 ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11 power supply 12v, 7v, 5v | |
data sheet IC 2803
Abstract: PVT422S-T PVT422 PVT422S 100.37A
|
Original |
0037A PVT422 120mA PVT422 5M-1982 data sheet IC 2803 PVT422S-T PVT422S 100.37A | |
125 diode
Abstract: US5U29
|
Original |
US5U29 US5U29 125 diode | |
622Z
Abstract: ISL6622 6622cbz ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11
|
Original |
ISL6622 FN6470 ISL6622 622Z 6622cbz ISL6622CBZ ISL6622CRZ ISL6622IBZ ISL6622IRZ TB363 TB417 VR11 | |
|
Contextual Info: 1.5V Drive Pch+SBD MOSFET ES6U1 zDimensions Unit : mm zStructure Silicon P-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). |
Original |
R0039A | |
|
Contextual Info: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode |
Original |
15Max. 85Max. | |
ISL6622B
Abstract: ISL6622BCBZ ISL6622BCRZ ISL6622BIBZ ISL6622BIRZ TB363 TB417 VR11 isl6622
|
Original |
ISL6622B FN6602 ISL6622B ISL6622BCBZ ISL6622BCRZ ISL6622BIBZ ISL6622BIRZ TB363 TB417 VR11 isl6622 | |
125 diode
Abstract: US5U30
|
Original |
US5U30 US5U30 125 diode | |
G marking sbd
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS VEC2822
|
Original |
VEC2822 ENA0961 A0961-6/6 G marking sbd MOSFET FOR 50HZ SWITCHING APPLICATIONS VEC2822 | |
ISL6566
Abstract: ISL6568CRZAR5184 ISL6568CRZR5184 ISL6568CRZ-TR5184 ISL6568 ISL6568CRR5184 ISL6568CR-TR5184 VID12 mosfet power amplifier class D
|
Original |
ISL6568 VRM10, ISL6568 FN9187 ISL6566 ISL6568CRZAR5184 ISL6568CRZR5184 ISL6568CRZ-TR5184 ISL6568CRR5184 ISL6568CR-TR5184 VID12 mosfet power amplifier class D | |
|
Contextual Info: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. |
Original |
15Max. 85Max. | |
|
Contextual Info: QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package. |
Original |
QS5U33 QS5U33 | |
US5U2Contextual Info: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 0.85Max. 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode |
Original |
85Max. 15Max. US5U2 | |
|
|
|||
"MOSFET Driver"
Abstract: 215T cp-clare MOSFET driver N and P MOSFET
|
OCR Scan |
||
|
Contextual Info: Datasheet Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulators with Built-in Power MOSFET BD9876AEFJ ●General Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type |
Original |
BD9876AEFJ BD9876AEFJ 300kHz | |
|
Contextual Info: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators |
Original |
2SK3726-01MR O-220F | |
RG 2006
Abstract: LPG GAS SENSOR dual n-channel buck mosfet driver 12v 12v mosfet led driver rg2006 AN-6003 FAN5109 FAN5109B FDD6696 FAN5029
|
Original |
FAN5109B FAN5109 FAN5029/FAN5182 500kHz FAN5109B RG 2006 LPG GAS SENSOR dual n-channel buck mosfet driver 12v 12v mosfet led driver rg2006 AN-6003 FAN5109 FDD6696 FAN5029 | |
HIP6601
Abstract: ISL6592 ISL6594A ISL6594ACB ISL6594B TB363 TB400 TB417
|
Original |
ISL6594A, ISL6594B ISL6594A ISL6594B ISL6592 FN9157 HIP6601 ISL6594ACB TB363 TB400 TB417 | |
PVT322
Abstract: PVT322S PVT322S-T mosfet ir 250 n
|
Original |
PVT322 170mA PVT322 PVT322S PVT322S-T mosfet ir 250 n | |
400v 20 amp mosfet
Abstract: QJS0512001 "MOSFET Module" MOSFET 20V 120A STY60NM50 50 Amp Mosfet mosfet amp mosfet module
|
Original |
QJS0512001 Amp/500 STY60NM50 400v 20 amp mosfet QJS0512001 "MOSFET Module" MOSFET 20V 120A 50 Amp Mosfet mosfet amp mosfet module | |
ISL6594D
Abstract: ISL6594DCBZ ISL6594DCBZ-T ISL6594DCRZ ISL6596 TB363 TB389
|
Original |
ISL6594D ISL6594D FN9282 ISL6594DCBZ ISL6594DCBZ-T ISL6594DCRZ ISL6596 TB363 TB389 | |
74451
Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3
|
Original |
SiE822DF 2002/95/EC 11-Mar-11 74451 SiE822DF-T1-E3 SiE822DF-T1-GE3 | |
74451
Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3
|
Original |
SiE822DF 2002/95/EC 18-Jul-08 74451 SiE822DF-T1-E3 SiE822DF-T1-GE3 | |