MOSFET VHF POWER AMPLIFIER Search Results

300 watt mosfet amplifier

Abstract: ASI10707 VFT300-28 ms1250
Contextual Info: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.

GP4060

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.

BLF278

Abstract: blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice
Contextual Info: BLF278 VHF POWER MOSFET DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 40 A VDSS

BLF246

Abstract: POWER MOSFET -N-CHANNEL
Contextual Info: BLF246 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .380 4L FLG FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz

VFT300-28

Abstract: ASI10707
Contextual Info: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FULL R B .080x45° FEATURES: (4X).060 R • PG = 14 dB Typical at 175 MHz

mosfet 1412

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.

ASI10701

Abstract: VFT5-28SL
Contextual Info: VFT5-28SL VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT5-28SL is Designed for Class A and AB VHF Power Amplifiers operating at frequencies up to 250 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • PG = 21 dB Typical at 175 MHz • η D = 50% Typical at POUT = 5 Watts

AM/FM

Abstract: ASI10709 VFT150-50
Contextual Info: VFT150-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: S D Ø.125 NOM.

VFT5-28SL

Abstract: ASI10701
Contextual Info: VFT5-28SL VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT5-28SL is Designed for Class A and AB VHF Power Amplifiers operating at frequencies up to 250 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • PG = 21 dB Typical at 175 MHz • η D = 50% Typical at POUT = 5 Watts

ASI10701

Abstract: VFT5-28 mosfet vhf power amplifier
Contextual Info: VFT5-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI VFT5-28 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A S FEATURES INCLUDE:

A 1469 mosfet

Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD02MUS1

Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

A 1469 mosfet

Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

3M Touch Systems

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

TRANSISTOR mosfet 9V

Abstract: RD06HHF1 RD06HVF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS TENTATIVE Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 12.3MIN APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

212J

Abstract: rd30hvf
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

BLF248

Abstract: all mosfet vhf power amplifier mosfet vhf power amplifier
Contextual Info: BLF248 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF248 is a Balanced N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. FEATURES INCLUDE: PACKAGE STYLE .400 BAL FLG D • PG = 11 dB Typical at 225 MHz

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

RD15HVF1

Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica

RD02MUS1

Abstract: RD02MUS1-101 T112 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD70HVF1-101

Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.