MOSFET VGS 5V VDS 100V Search Results

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

Contextual Info: シングル N チャンネル MOSFET ELM33416CA-S •概要 ■特長 ELM33416CA-S は低入力容量 低電圧駆動、 低 ・ Vds=100V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=1.3A ・ Rds on < 230mΩ (Vgs=10V) ・ Rds(on) < 240mΩ (Vgs=5V)

IRLM120A

Contextual Info: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.22 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

IRLM110A

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.44 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Contextual Info: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A • RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A • Low Gate Charge ( Typ. 22.2nC) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially

FDD850N10L

Abstract: 157A
Contextual Info: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

mosfet vgs 5v vds 100v

Contextual Info: SSD50N10-18D 43A , 100V , RDS ON 18mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

IRL530A

Contextual Info: IRL530A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.12Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 14 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n Lower Leakage Current : 10 A (Max.) @ VDS = 100V

IRLM120A

Contextual Info: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.22 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

IRLM110A

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Contextual Info: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) ＜ 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2

Contextual Info: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V

Contextual Info: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advance PowerTrench process that has been especially

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡2.5V DRIVE ¡VDSS . 100V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5AS-2 HIGH-SPEED SWITCHING USE FS5AS-2 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡10V DRIVE ¡VDSS . 100V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5VS-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS5VS-2 1 B 5 0.5 q w e wr ¡10V DRIVE ¡VDSS . 100V

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

mosfet vgs 5v vds 100v

Contextual Info: SGM0410 3.5A , 100V , RDS ON 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best combination of fast switching, ruggedized device design, low

N-Channel

Contextual Info: TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 100 V RDS on (max) 250 mΩ Qg 11.1 nC Block Diagram Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.)

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS5VSH-2 1 B 5 0.5 q w e wr ¡2.5V DRIVE ¡VDSS . 100V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VSH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSH-2 1 B 5 0.5 q w e wr ¡2.5V DRIVE ¡VDSS . 100V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS5UM-2 HIGH-SPEED SWITCHING USE FS5UM-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡10V DRIVE ¡VDSS . 100V