FDD850N10L Search Results
FDD850N10L Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDD850N10L |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.7A DPAK-3 | Original | 8 | |||
| FDD850N10LD |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.3A DPAK | Original | 11 |
FDD850N10L Price and Stock
onsemi FDD850N10LMOSFET N-CH 100V 15.7A DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD850N10L | Cut Tape | 7,969 | 1 |
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FDD850N10L | Reel | 2,500 |
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FDD850N10L | 4,796 |
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FDD850N10L | Reel | 2,500 |
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FDD850N10L | 4,650 |
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FDD850N10L | 2,047 | 1 |
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FDD850N10L | 2,500 |
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FDD850N10L | 14 Weeks | 2,500 |
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FDD850N10L | 15 Weeks | 2,500 |
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FDD850N10L | 12 Weeks | 2,500 |
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onsemi FDD850N10LDMOSFET N-CH 100V 15.3A TO252-4L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD850N10LD | Reel |
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Buy Now | |||||||
Fairchild Semiconductor Corporation FDD850N10L15.7 A, 100 V, 0.096 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD850N10L | 190 |
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Others FDD850N10LINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD850N10L | 25,539 |
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Get Quote | |||||||
FDD850N10L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDD850N10LD | |
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD850N10LD | |
FDD850N10L
Abstract: FDD85
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FDD850N10L FDD850N10L FDD85 | |
FDD850N10L
Abstract: 157A
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FDD850N10L FDD850N10L 157A | |
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD850N10LD | |
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Contextual Info: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A • RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A • Low Gate Charge ( Typ. 22.2nC) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDD850N10L | |
FDD850N10LContextual Info: FDD850N10L N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 mΩ Features Description • RDS on = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior |
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FDD850N10L FDD850N10L | |
KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 |