MOSFET VGS 5V SOT23 Search Results

2N7002 SOT23

Abstract: marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702
Contextual Info: 2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 7.5 @ VGS= 10V 0.5 7.5 @ VGS= 5V 0.05 V(BR)DSS 60 Description A small signal MOSFET for general purpose switching applications. Features D • Fast switching speed • Low gate drive capability

DMN65D8L-7

Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN65D8L-7

Abstract: dmn65d8l
Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN33D8L

Contextual Info: DMN33D8L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 30V 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance

Contextual Info: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

TSM2N7002

Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
Contextual Info: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time

Power MOSFET N-Channel sot-23

Abstract: TSM2N7002CX TSM2N7002
Contextual Info: TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS on , Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω Features — Advanced trench process technology — No minority carrier storage time

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

A102

Abstract: APM2306 J-STD-020A
Contextual Info: APM2306 N-Channel Enhancement Mode MOSFET Features • Pin Description D 30V/3.5A, RDS ON =70mΩ(typ.) @ VGS=5V 3 RDS(ON)=42mΩ(typ.) @ VGS=10V • • • Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Applications

Contextual Info: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed

FDV305N

Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Contextual Info: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 

MARKING C7K

Abstract: MSOT-23 2n7002k EQUIVALENT
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

ELM33416CA

Contextual Info: 单 N 沟道 MOSFET ELM33416CA-S •概要 ■特点 ELM33416CA-S 是 N 沟道低输入电容，低工作电压， •Vds=100V 低导通电阻的大电流 MOSFET。 ·Id=1.3A ·Rds on < 230mΩ (Vgs=10V) ·Rds(on) < 240mΩ (Vgs=5V) ■绝对最大额定值

APM2306

Abstract: APM2306A STD-020C
Contextual Info: APM2306A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3.5A , D RDS ON =42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)

MOSFET N SOT-23

Contextual Info: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.

marking code B2 MOSFET SOT23

Abstract: A102 APM2306 APM2306A
Contextual Info: APM2306A N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/3.5A , RDS ON =42mΩ(typ.) @ VGS=10V D S RDS(ON)=70mΩ(typ.) @ VGS=5V • • • G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available

MARKING C7K

Abstract: 2N7002K-7 2n7002k EQUIVALENT
Contextual Info: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

Contextual Info: DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) 50V 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage

MOSFET N SOT-23

Abstract: DS1060
Contextual Info: SSS2N7002E N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (Ω) Max D YW 02 3.0 @VGS = 10V 0.25A 60V 70 VDS (V) SOT-23 G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free.