MOSFET VDS 30 VGS 25 Search Results
MOSFET VDS 30 VGS 25 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET VDS 30 VGS 25 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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c 70795Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A |
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Si4812DY S-56946--Rev. 23-Nov-98 c 70795 | |
mosfet Vds 30 Vgs 25
Abstract: diode 70801
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Si4832DY S-56946--Rev. 23-Nov-98 mosfet Vds 30 Vgs 25 diode 70801 | |
Contextual Info: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A |
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Si4810DY S-56946--Rev. 23-Nov-98 | |
Si7501DN
Abstract: si-7501 si7501dn-t1
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Si7501DN 07-mm Si7501DN-T1 S-03722--Rev. 07-Apr-03 si-7501 | |
Si6404DQContextual Info: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS |
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Si6404DQ Si6404DQ-T1-GE3 11-Mar-11 | |
Contextual Info: IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i 80 PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits |
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IRFH8311PbF IRFH8311TRPBF IRFH8311TR2PBF | |
Contextual Info: PD - 97735A IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters |
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7735A IRFH8311PbF IRFH8311TRPBF | |
D47F
Abstract: IRFH8311 PQFN footprint d020d
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97735C IRFH8311PbF D47F IRFH8311 PQFN footprint d020d | |
Contextual Info: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.) |
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Si7998DP Si7998DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiF912EDZ
Abstract: s2mc
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SiF912EDZ SiF912EDZ-T1--E3 S-50131--Rev. 24-Jan-05 s2mc | |
Si7501DNContextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET |
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Si7501DN 07-mm Si7501DN-T1--E3 S-32419--Rev. 24-Nov-03 | |
Si7998DP
Abstract: Si7998DP-T1-GE3
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Si7998DP Si7998DP-T1-GE3 11-Mar-11 | |
Contextual Info: IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 mΩ nC i ID 80 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits |
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IRFH8311PbF IRFH8311TRPBF IRFH8311 | |
72032
Abstract: Si3590DV
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Si3590DV 18-Jul-08 72032 | |
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Si4834DYContextual Info: Si4834DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 |
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Si4834DY S-00906--Rev. 08-May-00 | |
72032
Abstract: Si3590DV
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Si3590DV 08-Apr-05 72032 | |
Contextual Info: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.) |
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Si7998DP Si7998DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si4808DY
Abstract: 71157 diode G1
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Si4808DY S-00344--Rev. 06-Mar-00 71157 diode G1 | |
S-00641-Rev
Abstract: Si4830DY
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Si4830DY S-00641--Rev. 10-Apr-00 S-00641-Rev | |
Si7501DNContextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET |
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Si7501DN 07-mm Si7501DN-T1--E3 08-Apr-05 | |
Si4808DYContextual Info: Si4808DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 |
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Si4808DY S-00344--Rev. 06-Mar-00 | |
Contextual Info: Si4830DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 |
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Si4830DY S-00641â 10-Apr-00 | |
Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® |
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Si5446DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Analog Power AM4528C P & N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 28 @ VGS = 4.5V 30 18 @ VGS = 10V 250 @ VGS = -2.5V -20 170 @ VGS = -4.5V These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures |
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AM4528C DS-AM4528 AM4528C-T1-XX |