MOSFET TSOP-6 23 Search Results

N419

Abstract: NTGD4167CT1G NTGD4167
Contextual Info: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features •ăComplementary N-Channel and P-Channel MOSFET •ăSmall Size 3 x 3 mm Dual TSOP-6 Package •ăLeading Edge Trench Technology for Low On Resistance •ăReduced Gate Charge to Improve Switching Response

Si3483DV

Contextual Info: Si3483DV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = -10 V -6.2 0.053 @ VGS = -4.5 V - 5.0 APPLICATIONS D Load Switch -30 TSOP-6 Top View 1 (4) S 6 (3) G

Si3459DV-T1-E3

Abstract: SI3459DV
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3483DV

Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3483DV

Abstract: si3483dvt1e3
Contextual Info: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4

Si3455ADV

Contextual Info: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal

Si3459DV

Abstract: Si3459DV-T1-E3 Si3459DV-T1 51166 70877
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2

SI3459DV

Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G

61828

Abstract: Si3948DV mosfet 23 Tsop-6 S-61828
Contextual Info: Si3948DV New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 D1 D2 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET

Si3948DV

Contextual Info: Si3948DV New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 D1 D2 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET

TSOP-6

Abstract: SI3459DV
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2

SI3459DV

Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G

Contextual Info: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Si3420DV

Contextual Info: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

W075

Abstract: Si3422DV
Contextual Info: Si3422DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 5 @ VGS = 10 V "0.42 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si3447DV

Contextual Info: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Si5915DC

Abstract: Si5915DC-T1
Contextual Info: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7

Si5915DC

Abstract: Si5915DC-T1
Contextual Info: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7

Contextual Info: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7

AAT8513

Abstract: AAT8513IJS-T1 SC70JW-8 "low threshold mosfet"
Contextual Info: AAT8513 28V P-Channel Power MOSFET General Description Features The AAT8513 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been

AAT8512

Abstract: AAT8512IJS-T1 SC70JW-8 "low threshold mosfet"
Contextual Info: AAT8512 28V P-Channel Power MOSFET General Description Features The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been

RD51

Abstract: AAT9513 AAT9513IJS-T1 SC70JW-8 ASC70 tsop-6 footprint
Contextual Info: AAT9513 28V N-Channel Power MOSFET General Description Features The AAT9513 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been