MOSFET TRANSISTOR SMD MARKING CODE A1 Search Results

Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING A1 transistor smd code marking KEY catalog mosfet Transistor smd SOT426 MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK125-50L DESCRIPTION Monolithic logic level protected power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. APPLICATIONS General purpose switch for

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING A1 MOSFET TRANSISTOR SMD MARKING CODE 11 PMFPB6545 smd transistor marking y1
Contextual Info: PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
Contextual Info: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

IPW65R660CFD

Abstract: ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.1, 2011-06-22 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD

65c6280

Abstract: IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R280C6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6

6r125c6

Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6

TRANSISTOR SMD MARKING CODE 604

Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD

Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

6R099C6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Abstract: a/NXP date code marking
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Contextual Info: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET TRANSISTOR SMD MARKING A1

Abstract: P-channel Trench MOSFET SOT1118
Contextual Info: PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using