PMFPB6532UP Search Results

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
Contextual Info: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

SMD TRANSISTOR MARKING 1B

Contextual Info: ' 1   PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

p-channel mosfet with diode sot89

Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
Contextual Info: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of

TRANSISTOR S1A 64 smd

Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

Contextual Info: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

transistor bjt 331

Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603
Contextual Info: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage