MOSFET TO-92 N-CHANNEL 20 VOLT Search Results

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

signal mosfet

Abstract: 22LL
Contextual Info: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage

bs108 mosfet

Abstract: mosfet to92 high current BS108 BS-108
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

PA-5R0H474-R

Abstract: LTC3535 LPS4012 LTC3535EDD MOS6020 MSS5131 MIP3226D3R3M LTC3528-2
Contextual Info: LTC3535 Dual Channel 550mA 1MHz Synchronous Step-Up DC/DC Converter DESCRIPTION FEATURES n n n n n n n n n n n n n n n Two Independent Step-Up Converters Each Channel Delivers 3.3V at 100mA from a Single Alkaline/NiMH Cell or 3.3V at 200mA from Two Cells VIN Start-Up Voltage: 680mV

BS108 relay driver

Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

vn2410l

Abstract: VN2410* mosfet
Contextual Info: VN2410L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 240 Vdc Drain −Gate Voltage VDGR 240 Vdc Gate −Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs

BS170

Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

22LL

Abstract: VN2222LL VN2222LLG to-92 mosfet VN2222LLRL VN2222LLRLRA VN2222LLRLRAG VN2222LLRLRM vn2222ll mosfet
Contextual Info: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW)

SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Contextual Info: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage

BC107 to92

Abstract: BC107 characteristic bs107 BC107 to-92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

BS108ZL1G

Abstract: BS108 PPAP MANUAL bs108 mosfet
Contextual Info: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

2N7000 MOSFET PIN DETAILS

Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc

Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

2sk mosfet

Abstract: 2sk 30A MOSFET 25C1 2SK1020 P15A
Contextual Info: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications

TSSOP-16

Contextual Info: Preliminary EUP2618 Triple Adjustable Output TFT-LCD DC-DC Converters DESCRIPTION FEATURES The EUP2618 triple-output DC-DC converter provides the regulated voltages required by active-matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and two low-power charge

2N7000 MOSFET PIN DETAILS

Abstract: 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP
Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc

BS170

Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD

a2183

Abstract: a2184 SK12-80 SK1280 SK128 2SK1280 SC-65 atz drawings asus schematic
Contextual Info: 2SK1280 FUJI POWER MOS-FET N- CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • Features lOutline Drawings • I lclude fast recovery diode • High voltage • Low driving power ■ ¿\pplications • Motor controlers • I iverters • Choppors ■Vlax. Ratings and Characteristics

transistor BS170

Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40

VN2410L

Abstract: VN2410LG VN2410LZL1 VN2410LZL1G 410L
Contextual Info: VN2410L Preferred Device Small Signal MOSFET 240 V, 200 mA, N−Channel TO−92 Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 240 Vdc Drain −Gate Voltage VDGR 240 Vdc

Contextual Info: BSP 92 SIPMOS P Channel MOSFET Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage Vfes = -240V • C ontin uou s drain current / D = -0.18A • D rain-source on-resistance ffcs on = 2 0 0 • Total pow er dissipation PD = 1.5W t Type

Contextual Info: VN0300L Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 60 V Drain −Gate Voltage VDGR 60 V Gate −Source Voltage − Continuous − Non−repetitive tp ≤ 50 s