MOSFET SPECIFICATION Search Results

Contextual Info: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

marking code 8 lead msop package analog devices

Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

quad mosfet array

Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Contextual Info: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance

Yaesu

Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable

PE4141

Contextual Info: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance

Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

20V P-Channel Power MOSFET

Abstract: US6M2
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

QS6M4

Contextual Info: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

EM6M1

Abstract: MOSFET IGSS 100A
Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.

QS6M4

Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

FDD8N50NZ

Abstract: FDD8N50 FDD8N50NZTM
Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and

QS6M4

Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

Contextual Info: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified

TSMT6

Abstract: voltage source inverter z source inverter QS6M4
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

mosfet specification

Abstract: TA4180
Contextual Info: Fuji power MOSFET Specification 2 3 1. Scope This specifies Fuji power MOSFET 2. Outline I Construction H) Application DI) Outview 1 O 1 6 2 SK 1 0 1 6 N-channel enhancement mode power MOSFET for switching T0-3P 3. Absolute raaxiamia ratings at Tc=25 ’

Contextual Info: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input

POWER MOSFET Rise Time 1 ns

Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
Contextual Info: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer