MOSFET SOT323 Search Results

A1 SOT323 MOSFET P-CHANNEL

Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
Contextual Info: AF1333P P-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

AF1332N

Contextual Info: AF1332N N-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - 2KV ESD Rating Per MIL-STD-883D - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low

2SK3018

Abstract: 3018G 2SK3018 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

NX3020NAK

Contextual Info: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit

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Contextual Info: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

3018G

Abstract: UK3018G Device Marking 313
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low

MOSFET SOT-23 marking 122

Abstract: 122e mosfet marking 506
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3 „ The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3  The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

2.5V "Power MOSFET"

Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PW

Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002PW

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MARKING SMD x9

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

A1 SOT323 MOSFET P-CHANNEL

Contextual Info: SO T3 23 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.