MOSFET SOT23-6 MAXIM Search Results

Contextual Info: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.

Contextual Info: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L

STT6N3LLH6

Abstract: DIODE marking A2 stt6n3
Contextual Info: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet — preliminary data Features Type RDS on VDSS STT6N3LLH6 30 V max 0.025 Ω (VGS= 10 V) 0.04 Ω (VGS= 4.5 V) ID 5 6 6A 3 2 1.6 W 1 SOT23-6L

MOSFET Drivers pin compatible with

Contextual Info: SM74101 SM74101 Tiny 7A MOSFET Gate Driver Literature Number: SNOSBA2 SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high

Contextual Info: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device

Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

LM5112MY

Abstract: LM5112
Contextual Info: LM5112 LM5112 Tiny 7A MOSFET Gate Driver Literature Number: SNVS234B LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

mosfet short circuit protection schematic diagram

Abstract: ic driver mosfet 8 pin mosfet power totem pole CIRCUIT Switching Power Supply Schematic Diagram using mosfet schematic 12v 3a power supply without transistor and ic LM5112-SDX MTD6N15 Q100 High Current MOSFET Driver bipolar non-inverting LM5112
Contextual Info: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint with improved package power dissipation required for high frequency operation. The compound output driver

ZXGD3001E6

Abstract: ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER
Contextual Info: ZXGD3001E6 9A peak Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

ZXGD3002E6

Abstract: ZXGD3002 ZETEX GATE DRIVER ZXGD3002E6TA MOSFET 4446 320 sot236 design ideas igbt display plasma marking E1 sot236 TS16949
Contextual Info: ZXGD3002E6 9A peak Gate driver in SOT23-6 General description The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation

Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

Contextual Info: ZXGD3004E6 8A peak gate driver in SOT23-6 General description The ZXGD3004E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 8A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay

lm5112

Contextual Info: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad

lm5112

Abstract: L132B
Contextual Info: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MOSFET TRANSISTOR SMD MARKING CODE NH

Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
Contextual Info: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MOSFET sot23-6 QG

Abstract: MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23
Contextual Info: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

led driver mosfet SOT23 6pin

Abstract: MTD6N15 Q100 SDE06A
Contextual Info: SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that

LM5112MY

Abstract: LM5112 LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN
Contextual Info: LM5112 Tiny 7A MOSFET Gate Driver General Description Features The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS

Contextual Info: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

ZXMN2088

Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance