MOSFET SI2300 Search Results

MOSFET SI2300 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
ICL7667MJA/883B		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)	PDF
AM9513ADIB		Rochester Electronics LLC	AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40	PDF
CA3130T		Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
CA3130AT/B		Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF

MOSFET SI2300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si2300DS Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08	PDF
Si2300DS Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 18-Jul-08 SI2300 P2 MARKING CODE s100111rev	PDF
Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2300DS 2002/95/EC O-236 OT-23) Si2300DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
si2300 Abstract: Si2300DS S10-0258 Contextual Info: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si2300DS 18-Jul-08 si2300 S10-0258	PDF
Contextual Info: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si2300DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI2300 Abstract: si2300 sot-23 mosfet si2300 Contextual Info: SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS ON , Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability	Original	SI2300 OT-23 SI2300 si2300 sot-23 mosfet si2300	PDF
smd diode 319 Abstract: SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet ki2300 78 DIODE SMD mosfet vgs 5v si2300 sot-23 Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A	Original	KI2300 SI2300) OT-23 smd diode 319 SI2300 smd transistor 888 SMD TRANSISTOR mosfet si2300 mosfet si2300 1A smd mosfet 78 DIODE SMD mosfet vgs 5v si2300 sot-23	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
si2300 Abstract: Si2300DS A 0412 MOSFET AN609 Contextual Info: Si2300DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2300DS AN609, 15-Jan-10 si2300 A 0412 MOSFET AN609	PDF