MOSFET RDSON 0.008 Search Results

NTR0202PL

Abstract: NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G
Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

Contextual Info: NTR0202PL, NVTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

MSFA0M02X8

Abstract: DFN3
Contextual Info: CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET with Schottky Diode MSFA0M02X8 MOSFET product Summary BVDSS RDSON MAX ID -20V 100mΩ -3A Schottky Product Summary

248E-6

Abstract: STMicroelectronics 9*918 F 9212 L6472 ACT 600 diode S 335
Contextual Info: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate

Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

65N02R

Abstract: 65N02 65N02RG p65n02rg 418AA-01 NTB65N02R NTB65N02RG NTB65N02RT4 NTP65N02R p65n02
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

Contextual Info: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate

fdb5800

Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ Motor Load Control „ High performance trench technology for extermely low Rdson „ DC-DC Converters and Off-Line UPS

3c sot363

Abstract: SOT-363 Marking 6C mtdk sot-363 marking 3C
Contextual Info: CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET MTDK3S6R BVDSS ID RDSON Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 20V 100mA 3Ω Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching

65n02r

Abstract: 65N02 p65n02r P65N02
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS

FDB5800

Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ Motor/ Body Load Control „ High performance trench technology for extermely low Rdson „ ABS Systems „ Power Train Management

65n02r

Abstract: 65N02 NTB65N02R NTB65N02RT4 NTP65N02R p65n02 p65n02r
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS

65n02r

Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 65 A, 24 V

NTB65N02R

Abstract: NTB65N02RT4 NTP65N02R 0012Tj
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 65 A, 24 V

fdb fairchild

Abstract: FDB5800
Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ DC-DC Converters and Off-Line UPS „ High performance trench technology for extermely low Rdson „ Low Gate Charge „ High power and current handling capability

PA 0016 diagram

Abstract: P-channel MOSFET
Contextual Info: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

DPAK A11

Abstract: MOSFET TO-252
Contextual Info: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

irlml6346

Abstract: IRLML6344 IRLML6344TR irlml6244 IRLML6246 IRLML9303 irlml2060 IRLML9301 IRLML6344TRPBF IRLML0060
Contextual Info: PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 29 mΩ 37 mΩ RDS on max (@VGS = 4.5V) G 1 3 D S RDS(on) max (@VGS = 2.5V) Micro3TM (SOT-23) IRLML6344TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ)

TSM10N06

Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

3 watt 70v zener diode

Abstract: inkjet print head interface K784P
Contextual Info: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP

h-bridge pwm schematics circuit

Abstract: H-bridge speed control 12v 10a 10a h-bridge driver 12vdc motor forward reverse control diagram H-bridge motor drive source code h-bridge gate drive schematics circuit mosfet based h bridge TRANSISTORS BJT list Switching Power supply with HIP4080A HRF3205 equivalent
Contextual Info: Column #52: Stamp-controlled High-power H-bridge Column #52, August 1999 by Lon Glazner: Stamp-Controlled High Power H-Bridge It seems like quite a few people are using BASIC Stamps as the brains in low-level robotics. Because of simplicity, ease of use, and versatility, it's no wonder that the

Contextual Info: LX7302 5V to 26V Synchronous Step Down DC-DC Controller Production Datasheet Description Features The LX7302 is a single phase step down DC-DC controller IC designed to drive a high side N-channel MOSFET and a low side N-channel synchronous rectifier. The LX7302 uses a fixed on-time hysteretic

diode zener fz 5.6v

Abstract: toko rcl ADP1821 20SP180M 2R5SEPC820M BAT54 FDV0620-2R2M IRFR3709Z IRLR7807Z
Contextual Info: Step-Down DC-to-DC Controller ADP1821 FEATURES GENERAL DESCRIPTION Wide power-input voltage range: 1 V to 24 V Chip supply voltage range: 3 V to 5.5 V Wide output voltage range: 0.6 V to 85% of input voltage 1% accuracy, 0.6 V reference voltage All N-channel MOSFET design for low cost