MOSFET PP Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

mosfet SOA testing

Abstract: MOSFET testing linear mosfet MOSFET 1000 VOLTS
Contextual Info: POWER MOS PRODUCTS - Linear MOSFETs W E N HERMETIC LINEAR MOSFETs What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with concurrent high voltage and high current near DC conditions >100msecs . applications. This new Linear MOSFET

Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10

Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171

Zener diode with 9v FOR POWER SUPPLY

Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Contextual Info: mica MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

MAX5048AAUT

Abstract: Low Power PWM controller 6-pin Power PWM controller 6-pin AKW SOT23 MAX5048BAUT-TG16 MAX5048BAUT-T
Contextual Info: 19-2419; Rev 4; 7/05 7.6A, 12ns, SOT23/TDFN, MOSFET Driver Features The MAX5048A/MAX5048B are high-speed MOSFET drivers capable of sinking/sourcing 7.6A/1.3A peak currents. These devices take logic input signals and drive a large external MOSFET. The MAX5048A/MAX5048B

501B 8 P

Abstract: 5018B
Contextual Info: MIC5018 IE ü b IttyBitty High-Side MOSFET Driver L Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET

Power MOSFET TT 2146

Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
Contextual Info: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that

Contextual Info: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) Features MOSFET Conditions

Si2301CDS

Abstract: SI2301CDS-T1-GE3 n1 marking 072b 27VDS
Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 VDS (V) - 20 • Halogen-free Option Available • TrenchFET Power MOSFET Qg (Typ.) RoHS

Si2333CDS

Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 Qg (Typ.) APPLICATIONS

Si2301CDS

Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI2351DS-T1-GE3

Abstract: Si2351DS
Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 • • • • Qg (Typ.) 3.2 nC Halogen-free Option Available TrenchFET Power MOSFET

"MOSFET Driver"

Abstract: 215T cp-clare MOSFET driver N and P MOSFET
Contextual Info: CPClare MOSFET Driver CORPORATION OptoMOS Solid State MOSFET Driver DESCRIPTION CP Clare’s FDA MOSFET driver couples infrared light emitting diodes with a pair of proprietary photovoltaic integrated circuits. In addition to providing voltage for turn­ on of discrete MOSFETs, these patented ICs feature a gate-clamping circuit to

Si2303CDS

Abstract: 083b SI2303CDS-T1 marking CODE MH SI2303CDST1GE3 SI2303CDS-T1-GE3
Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si2301CDS

Abstract: Si2301CDS-T1-GE3
Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

equivalent 2sk2837 mosfet

Contextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s

Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 • • • • Qg (Typ.) 3.2 nC Halogen-free Option Available TrenchFET Power MOSFET