MOSFET POWER P-CHANNEL N-CHANNEL CIRCUIT Search Results

Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's

Transistor Mosfet N-Ch 30V

Abstract: STS7C4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

MOSFET N-CH 200V

Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

STS7C4F30L

Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.070Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V STSC4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.018Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STSC4F30L(N-Channel) STSC4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.060 Ω 70 A 70 A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

Transistor Mosfet N-Ch 30V

Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

MOSFET 923 54

Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
Contextual Info: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V

IRF P CHANNEL MOSFET

Abstract: MOSFET 150 N IRF N-P Channel mosfet
Contextual Info: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET

AN-994

Abstract: IRF7107
Contextual Info: PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5 N-Ch

VQ3001

Contextual Info: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*

pwm lm358 mosfet

Abstract: LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits
Contextual Info: P W R - N C H 4 0 1 -r-w -s i» 4-Channel MOSFET Array 400 V - 335 mA per channel POWER INTEGRATIONS INC 37E D • POWER INTEGRATIONS, INC. 726^25^ GOQOOTS 5 * P I N Product Highlights 150 V 4 open-drain N-channel MOSFETs per package • 200, 300, and 400 V versions

Contextual Info: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

AN-994

Abstract: IRF7106
Contextual Info: PD - 9.1098B IRF7106 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 3 6 4 5

FDS8958A

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: SSM6E02TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E02TU 2.1±0.1 package. 1.7±0.1 Low power dissipation due to P-channel MOSFET that features low Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS −20

Contextual Info: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad

AN-994

Abstract: IRF7309 P-channel HEXFET Power MOSFET
Contextual Info: PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2

Contextual Info: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

4422 mosfet

Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

SSF4604

Abstract: SOP-8 4604 mosfet 4604 inverter MOSFET 4604 4604 Switching 24v inverters schematic diagram Transistor Mosfet N-Ch 30V
Contextual Info: SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS ON and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES

FDY4001CZ

Abstract: SC89
Contextual Info: FDY4001CZ Complementary N & P-Channel PowerTrench MOSFET tm Features General Description Q1: „ Max rDS on = 7Ω at VGS = 2.5V, ID = 175mA This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and