MOSFET P 3055 Search Results

X780

Contextual Info: JVKJÏXAJVK 19-0125; Rev. 0; 4/93 Dual-Slot PCMCIA Analog P o w er C ontroller The M A X 780A in c o rp o ra te s tw o 0 V /+ 5 V /+ 1 2 V /h ig h im p ed a n ce pow er outputs for flash Vpp program m ing, level shifters for pow er MOSFET control of two se p a ­

3055E

Abstract: D3055 atech
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is

3055vl

Abstract: Motorola 3055vl 3055vl motorola
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This

MTP3055EL

Abstract: 3055el TP3055EL TP3055E
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 3055E L Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate T h is a d v a n c e d E-FET is a T M O S p o w e r M O S F E T d e s ig n e d to w ith s ta n d h ig h e n e rg y in

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

Contextual Info: LineAB TECHNOLOGY ltci255 Dua| 24V High-Side MOSFET Driver FCflTUfteS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1255 dual high-side driver allows using low cost N-channel FETs for high-side industrial and auto­ motive switching applications. An internal charge pump

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

class d amplifier schematic hip4080

Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Contextual Info: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

class d amplifier schematic hip4080

Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Contextual Info: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

HIP4080 amplifier circuit diagram class D

Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Contextual Info: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

transistor c815

Abstract: c815 transistor transistor D800 APW 7313 transistor c814 C817 C815 transistor apm3055 ut 803B core i5 MOTHERBOARD CIRCUIT diagram
Contextual Info: APW3007 Advanced Dual PWM and Dual Linear Power Controller Features General Description • The APW3007 provides the power control and protection for four output voltage in high-performance microprocessor and computer applications. The APW3007 is designed to provide termination

t3055vl

Abstract: T30-55VL MC33345
Contextual Info: M MOTOROLA — — — M C33345 Product Preview Lithium B attery Protection Circuit for One to Four Cell B attery Packs The MC33345 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of one to four cell rechargeable

F7822

Abstract: bel 100p transistor pin configuration BEL 100p transistor EQUIVALENT diode d1n5819 BEL 100p transistor nx2601 2N3904 c24 ensw1 CON20B d1n5819
Contextual Info: Evaluation board available. NX2601 DUAL SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER & 5V BIAS REGULATOR PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION The NX2601 controller IC is a triple controller with a dual channel synchronous Buck controller IC and an LDO controller designed for multiple converters such as PCIe

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

Contextual Info: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

4614 mosfet

Abstract: MOTOROLA 3055V 3055VL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This

3055VL

Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

mosfet L 3055 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET

Contextual Info: FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

t3055vl

Abstract: T30-55VL T3055V C33348
Contextual Info: M m o to r o la M C33348 Product Preview Lithium B attery Protection Circuit for One Cell B attery Packs The M C33348 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of one cell rechargeable battery pack. Cell protection features consist of internally trimm ed charge

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

TP3055E

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Advance Inform ation TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced " E " series o f TM O S p o w e r MOSFETs is designed to w ith s ta n d hig h ene rg y in th e avalanche and c o m m u ta tio n m odes. These n ew ene rg y e fficie n t devices

mosfet L 3055 motorola

Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Contextual Info: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET