MOSFET N 30V 30A 252 Search Results

APM3023NU

Abstract: APM3023N STD-020C A102 diode
Contextual Info: APM3023NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM3024N

Abstract: APM3024NU STD-020C
Contextual Info: APM3024NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ (typ.) @ VGS=10V G RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

3023n

Abstract: APM3023N A102 J-STD-020A M3023 TO-252-E
Contextual Info: APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages

diode ja

Contextual Info: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.

SSD95N03

Abstract: MosFET 95N03
Contextual Info: SSD95N03 96A , 30V , RDS ON 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Mosfet

Abstract: SSFM2508
Contextual Info: SSFM2508 25V N-Channel MOSFET Main Product Characteristics: 25V VDSS SSFM2508 RDS on 8mohm ID 55A TO-252 DPAK Marking and pin assignment Features and Benefits:       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Contextual Info: KSMD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω Features TO-252AA • Fast switching • r DS ON = 0.014Ω (Typ), V GS = 10V • r DS(ON) = 0.024Ω (Typ), V GS = 4.5V • Qg (Typ) = 9.6nC, V GS = 5V • Qgd (Typ) = 3.4nC • C ISS (Typ) = 900pF

APM3109

Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
Contextual Info: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated

IRFZ34V

Contextual Info: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D

IRFZ34V

Contextual Info: PD - 94841 IRFIZ34VPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D

Contextual Info: PD - 95127 IRL3713PbF IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l TO-220 is available in PbF as Lead-Free

APM3112N

Abstract: apm31
Contextual Info: APM3112NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =9.5mΩ (typ.) @ VGS=10V G RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices Available

APM3109

Abstract: apm31
Contextual Info: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Avalanche Rated D

MJ16015

Abstract: IRFIZ34V IRFZ34V 12V 30A diode
Contextual Info: PD - 94053 IRFIZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ

Contextual Info: FôteEiTUâUË U JI 2SK2050 N-channel MOS-FET F -lll S e r ie s 100 V 80W > Outline Drawing > Features - 0,055Q 30A High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

IRFZ34V

Abstract: smps 2000 watts circuit
Contextual Info: PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ

AN-994

Abstract: IRFZ34V IRFZ34VL IRFZ34VS 94180
Contextual Info: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V

94103

Abstract: IRFU3709 24V 30A SMPS
Contextual Info: PD - 94103 IRFU3709 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l l VDSS RDS on max

AN-994

Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Contextual Info: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V

A102

Abstract: APM3009N APM3009NU rg6 to vga TO-252 N-channel MOSFET 30V50A
Contextual Info: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

RSN 3305

Abstract: schematic diagram converter 12v to 24v 30a 10uf Capacitor ESR 2mohm Panasonic dv 700 manual compensator for cuk converter SP6133 68uF 10V SANYO SP6133EB schematic diagram PWM 12V 30a QFN 8 CARSEM
Contextual Info: SP6133 Solved by TM 2 GND 3 VFB 4 UV IN V IN BST 13 12 GH SP6133 16 Pin QFN 3mm x 3mm 5 6 7 11 SWN 10 ISP 9 ISN 8 SS PGND 14 PWRGD 1 15 EN GL 16 COMP FEATURES • 5V to 24V Input step down converter ■ Up to 30A output capability ■ Highly integrated design, minimal components

APM3009N

Abstract: APM3009NU STD-020C rg6 to vga mosfet Marking Code b3
Contextual Info: APM3009NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=11mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

IRL3713S

Abstract: IRL3713L AN-994 IRL3713 mosfet k 61 y1
Contextual Info: PD - 94184 PROVISIONAL IRL3713 IRL3713S IRL3713L SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power