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    MOSFET MARKING KF Search Results

    MOSFET MARKING KF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    MOSFET MARKING KF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SEMICONDUCTOR KF50N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		kf50n06p PDF

    Contextual Info: u i r LTC1147-3.3 LTC1147-5/LTC1147L n TECHNOLOGY High Efficiency Step-Down Switching Regulator Controllers KflTUfKS D€SCRIPTIOf1 • Very High Efficiency: Over 95% Possible ■ Wide V|N Range: 3.5V* to 16V ■ Current Mode Operation for Excellent Line and Load


    OCR Scan     		ltc1147-3ltc1147-5/ltc1147l160jjas51fl4bfl+15c176 PDF

    D 92 M - 02 DIODE

    Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
    Contextual Info: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		kf60n06pfig13fig14fig15+3d 92 m - 02 dioded 92 m - 03 diodec 92 m - 02 diode PDF

    KF50N06

    Abstract: KF50N06P 330mJ
    Contextual Info: SEMICONDUCTOR KF50N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		kf50n06pfig13fig14fig15+2kf50n06330mj PDF

    KF7N50

    Abstract: KF7N50F KF7N50P 16nC
    Contextual Info: SEMICONDUCTOR KF7N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf7n50p/fkf7n50pabove25di/dt100a/+3kf7n50kf7n50f16nc PDF

    KF9N50

    Abstract: kf9n50p KF9N50F
    Contextual Info: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf9n50p/fkf9n50pabove25di/dt100a/+2kf9n50kf9n50f PDF

    kf5n53

    Contextual Info: SEMICONDUCTOR KF5N53F N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		kf5n53fdi/dt100a/kf5n53 PDF

    transistor KF5n50fza

    Abstract: mosfet KF5N50 KF5N50F KF5N50FS
    Contextual Info: SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150nskf5n50fsa300nskf5n50fza+6kf5n50fza/fsadi/dt100a/transistor kf5n50fzamosfet kf5n50kf5n50fkf5n50fs PDF

    kf13n50

    Abstract: 4413a KF13N50F
    Contextual Info: SEMICONDUCTOR KF13N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf13n50p/fkf13n50pis13adi/dt200a/+3kf13n504413akf13n50f PDF

    Contextual Info: SEMICONDUCTOR KF2N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		kf2n60ldi/dt100a/ PDF

    kf5n53

    Abstract: KF5N53FS TD 2012
    Contextual Info: SEMICONDUCTOR KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150nskf5n53fsdi/dt100a/kf5n53+1td 2012 PDF

    KF6N60

    Abstract: KF6N60F 16nC KF6N60P
    Contextual Info: SEMICONDUCTOR KF6N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf6n60p/fkf6n60pabove25ear300v+4di/dt100a/kf6n60kf6n60f16nc PDF

    kf12n60

    Abstract: KF12N60P kf12n60f IS12A
    Contextual Info: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		kf12n60p/fkf12n60pis12adi/dt200a/+2kf12n60kf12n60f PDF

    KF6N60

    Abstract: KF6N60I KF6N60D
    Contextual Info: SEMICONDUCTOR KF6N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF6N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf6n60d/ikf6n60dabove25di/dt100a/+2kf6n60kf6n60i PDF

    KF3N40W

    Abstract: kf3n40
    Contextual Info: SEMICONDUCTOR KF3N40W TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and


    Original     		kf3n40wabove25di/dt200a/kf3n40 PDF

    KF7N50

    Abstract: KF7N50D KF7N50I
    Contextual Info: SEMICONDUCTOR KF7N50D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf7n50d/ikf7n50dabove25di/dt100a/+2kf7n50kf7n50i PDF

    Contextual Info: SEMICONDUCTOR KF2N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		kf2n60ldi/dt100a/kf2n60 PDF

    KF1N60

    Abstract: KF1N60I
    Contextual Info: SEMICONDUCTOR KF1N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF1N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		kf1n60d/ikf1n60ddi/dt100a/kf1n60+1kf1n60i PDF

    KF5N40

    Contextual Info: SEMICONDUCTOR KF5N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and


    Original     		kf5n40d/ikf5n40dkf5n40 PDF

    KF3N60

    Abstract: KF3N60I
    Contextual Info: SEMICONDUCTOR KF3N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		kf3n60d/ikf3n60ddi/dt100a/kf3n60+1kf3n60i PDF

    kf3n40

    Abstract: KF3N40I KF3N40D fast reverse recovery time of LED
    Contextual Info: SEMICONDUCTOR KF3N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and


    Original     		kf3n40d/ikf3n40ddi/dt200a/kf3n40+2kf3n40ifast reverse recovery time of led PDF

    KF9N40D

    Contextual Info: SEMICONDUCTOR KF9N40D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and


    Original     		kf9n40dkf9n40 PDF

    Contextual Info: SEMICONDUCTOR KF1N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		kf1n60l100us PDF

    Contextual Info: SEMICONDUCTOR KF1N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		kf1n60l100us PDF