MOSFET MARKING KE Search Results

MIP006

Contextual Info: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)

TSM60N900CP

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

TSM60N600CP

Contextual Info: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ●

Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)

Contextual Info: TSM70N10 100V N-Channel Power MOSFET TO-252 DPAK TO-251S (IPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 100 V RDS(on)(max) 13 mΩ Qg 145 nC Block Diagram Features ● ● ● Low On-Resistance Low Input Capacitance

N-Channel

Contextual Info: TSM600N25E 250V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 250 V RDS(on)(max) 0.6 Ω Qg 8.4 nC Features ● ● Block Diagram 100% avalanche tested Improved ESD performance

irlru9343

Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
Contextual Info: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

TSM7N65A

Contextual Info: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)

N-Channel

Contextual Info: TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. 2. Source 7. 3. Source 6. 4. Gate 5. Key Parameter Performance Drain Drain Drain Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 4.2 VGS = 4.5V 6 Qg 24 nC Block Diagram Ordering Information

Contextual Info: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information

N-Channel

Contextual Info: TSM180N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. 2. Source 7. 3. Source 6. 4. Gate 5. Key Parameter Performance Drain Drain Drain Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 18 VGS = 4.5V 28 Qg 4.1 nC Block Diagram

Contextual Info: TSM058N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.8 mΩ Qg 118 nC Features Block Diagram ● Low On-Resistance

Contextual Info: TSM070N07PQ56 65V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 65 V RDS on (max) 7 mΩ Qg 125 nC Features ● ● ● Block Diagram Low On-Resistance

N-Channel

Contextual Info: TSM052N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.2 mΩ Qg 50 nC Features Block Diagram ● Low On-Resistance

Contextual Info: TSM028N04PQ56 40V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 40 V RDS on (max) 2.8 mΩ Qg 78 nC Features ● ● ● Block Diagram Low On-Resistance

Contextual Info: TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 2 VGS = 4.5V 3 Qg 82 nC Block Diagram Features

N-Channel

Abstract: 20V N-Channel MOSFET
Contextual Info: TSM4806 20V N-Channel MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 20 V RDS on (max) VGS = 4.5V 20 VGS = 2.5V 25 VGS = 1.8V 31 Qg mΩ 12.3 nC Block Diagram